ID - Drain Current (Amps) Normalised RDS(on) and VGS(th) ID(On)-On-State Drain Current (Amps) ID - Drain Current (Amps) Gate Threshold Voltage VGS(TH) P-CHANNEL ENHANCEMENT ZVP3306A ZVP3306A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 TYPICAL CHARACTERISTICS FEATURES *60 Volt V DS -1.2 VVGSGS==-2-200VV *R =14 VGS= DS(on) -1.0 -16V -1.0 -16V -14V -14V -0.8 -0.8 -12V D -12V G S -0.6 -10V -10V -0.6 E-Line -9V -9V -8V -0.4 -8V TO92 Compatible -0.4 -7V -6V -7V ABSOLUTE MAXIMUM RATINGS. -0.2 -6V -5V -0.2 PARAMETER SYMBOL VALUE UNIT -5V -4V -4.5V 0 Drain-Source Voltage V -60 V 0 DS 0 -10 -20 -30 -40 -50 0-2 -4 -6 -8 -10 Continuous Drain Current at T =25C I -160 mA amb D VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Pulsed Drain Current I -1.6 A DM Output Characteristics Saturation Characteristics Gate Source Voltage V 20 V GS Power Dissipation at T =25C P 625 mW amb tot Operating and Storage Temperature Range T :T -55 to +150 C j stg -10 -1.0 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). -8 -0.8 amb VDS=-10V PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. ID= -6 -400mA -0.6 Drain-Source Breakdown BV -60 V I =-1mA, V =0V DSS D GS Voltage -4 -0.4 Gate-Source Threshold V -1.5 -3.5 V ID=-1mA, V = V GS(th) DS GS -200mA Voltage -2 -0.2 Gate-Body Leakage I 20 nA V = 20V, V =0V GSS GS DS 0 -100mA 0 Zero Gate Voltage Drain I -0.5 A V =-60 V, V =0 0-2 -4 -6 -8-10 0-2 -4 -6 -8 -10 DSS DS GS Current -50 V =-48 V, V =0V, T=125C(2) A DS GS VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) On-State Drain Current(1) I -400 mA V =-18 V, V =-10V D(on) DS GS Transfer Characteristics Voltage Saturation Characteristics Static Drain-Source On-State R 14 V =-10V,I =-200mA DS(on) GS D Resistance (1) Forward Transconductance g 60 mS V =-18V,I =-200mA fs DS D 2.6 100 (1)(2) 2.4 VGS=-5V VGS=-10V -6V Input Capacitance (2) C 50 pF -7V ID=0.37A iss 2.2 2.0 Common Source Output C 25 pF V =-18V, V =0V, f=1MHz oss DS GS -10V 1.8 Capacitance (2) -15V 1.6 10 Reverse Transfer C 8pF rss 1.4 Capacitance (2) -20V 1.2 VGS=VDS Turn-On Delay Time (2)(3) t 8ns ID=-1mA 1.0 d(on) 0.8 Rise Time (2)(3) t 8ns r V -18V, I =-200mA 0.6 DD D 1 -10 -100 -1000 -40 -20 0 20 40 60 80 100 120 140 160 180 Turn-Off Delay Time (2)(3) t 8ns d(off) Fall Time (2)(3) t 8ns f ID-Drain Current (mA) Junction Temperature (C) (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% DS(on) GS(th) On-resistance vs Drain Current Normalised R and V vs Temperature (2) Sample test. ( 3-430 3-429 3 ) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Drain-Source Resistance RDS(on) RDS(on)-Drain Source On Resistance () VDS-Drain Source Voltage (Volts) ID - Drain Current (Amps) Normalised RDS(on) and VGS(th) ID(On)-On-State Drain Current (Amps) ID - Drain Current (Amps) Gate Threshold Voltage VGS(TH) P-CHANNEL ENHANCEMENT ZVP3306A ZVP3306A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 TYPICAL CHARACTERISTICS FEATURES *60 Volt V DS -1.2 VVGSGS==-2-200VV *R =14 VGS= DS(on) -1.0 -16V -1.0 -16V -14V -14V -0.8 -0.8 -12V D -12V G S -0.6 -10V -10V -0.6 E-Line -9V -9V -8V -0.4 -8V TO92 Compatible -0.4 -7V -6V -7V ABSOLUTE MAXIMUM RATINGS. -0.2 -6V -5V -0.2 PARAMETER SYMBOL VALUE UNIT -5V -4V -4.5V 0 Drain-Source Voltage V -60 V 0 DS 0 -10 -20 -30 -40 -50 0-2 -4 -6 -8 -10 Continuous Drain Current at T =25C I -160 mA amb D VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Pulsed Drain Current I -1.6 A DM Output Characteristics Saturation Characteristics Gate Source Voltage V 20 V GS Power Dissipation at T =25C P 625 mW amb tot Operating and Storage Temperature Range T :T -55 to +150 C j stg -10 -1.0 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). -8 -0.8 amb VDS=-10V PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. ID= -6 -400mA -0.6 Drain-Source Breakdown BV -60 V I =-1mA, V =0V DSS D GS Voltage -4 -0.4 Gate-Source Threshold V -1.5 -3.5 V ID=-1mA, V = V GS(th) DS GS -200mA Voltage -2 -0.2 Gate-Body Leakage I 20 nA V = 20V, V =0V GSS GS DS 0 -100mA 0 Zero Gate Voltage Drain I -0.5 A V =-60 V, V =0 0-2 -4 -6 -8-10 0-2 -4 -6 -8 -10 DSS DS GS Current -50 V =-48 V, V =0V, T=125C(2) A DS GS VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) On-State Drain Current(1) I -400 mA V =-18 V, V =-10V D(on) DS GS Transfer Characteristics Voltage Saturation Characteristics Static Drain-Source On-State R 14 V =-10V,I =-200mA DS(on) GS D Resistance (1) Forward Transconductance g 60 mS V =-18V,I =-200mA fs DS D 2.6 100 (1)(2) 2.4 VGS=-5V VGS=-10V -6V Input Capacitance (2) C 50 pF -7V ID=0.37A iss 2.2 2.0 Common Source Output C 25 pF V =-18V, V =0V, f=1MHz oss DS GS -10V 1.8 Capacitance (2) -15V 1.6 10 Reverse Transfer C 8pF rss 1.4 Capacitance (2) -20V 1.2 VGS=VDS Turn-On Delay Time (2)(3) t 8ns ID=-1mA 1.0 d(on) 0.8 Rise Time (2)(3) t 8ns r V -18V, I =-200mA 0.6 DD D 1 -10 -100 -1000 -40 -20 0 20 40 60 80 100 120 140 160 180 Turn-Off Delay Time (2)(3) t 8ns d(off) Fall Time (2)(3) t 8ns f ID-Drain Current (mA) Junction Temperature (C) (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% DS(on) GS(th) On-resistance vs Drain Current Normalised R and V vs Temperature (2) Sample test. ( 3-430 3-429 3 ) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Drain-Source Resistance RDS(on) RDS(on)-Drain Source On Resistance () VDS-Drain Source Voltage (Volts)