ZVP3310F SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Product Summary Features and Benefits Low On-Resistance BVDSS RDS(ON) max ID max Low Input Capacitance Fast Switching Speed -100V 20 V = -10V -75mA GS Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) An Automotive-Compliant Part is Available Under Separate Description and Applications Datasheet (ZVP3310FQ) This MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(ON) Mechanical Data ideal for high efficiency power management applications. Case: SOT23 Case Material: Molded Plastic, Green Molding Compound. Load Switching UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.008 grams (Approximate) SOT23 D D G G S S Top View Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging ZVP3310FTA SOT23 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See ZVP3310F Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -100 V DSS Gate-Source Voltage V 20 V GSS Continuous Drain Current Steady State I -75 mA D Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -1.2 A DM Pulsed Source Current (10s Pulse, Duty Cycle = 1%) I -1.2 A SM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation ( T = +25C) P 330 mW A D Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV -100 V V = 0V, I = -1mA DSS GS D -1 A V = -100V, V = 0V DS GS Zero Gate Voltage Drain Current I DSS V = -80V, V = 0V, T = DS GS -50 A +125C Gate-Source Leakage 20 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage -1.5 -3.5 V V V = V , I = -1mA GS(TH) DS GS D Static Drain-Source On-Resistance (Note 5) 20 R V = -10V, I = -150mA DS(ON) GS D On-State Drain Current (Note 5) I -300 mA V = -25V, V = -10V D(ON) DS GS Forward Transconductance (Note 5) gfs 50 mS V = -25V, I = -150mA DS D DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C 50 iss Output Capacitance C 15 pF V = -25V, V = 0V, f = 1MHz oss DS GS Reverse Transfer Capacitance C 5 rss Turn-On Delay Time t 8 D(ON) Turn-On Rise Time 8 t R ns V = -25V, I = -150mA DD D Turn-Off Delay Time 8 t D(OFF) Turn-Off Fall Time 8 t F Notes: 5. Measured under pulsed conditions. Width = 300ms. Duty cycle <=2%. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 5 ZVP3310F August 2019 Diodes Incorporated www.diodes.com Document number: DS33406 Rev. 5 - 2