P-CHANNEL ENHANCEMENT P-CHANNEL ENHANCEMENT ZVP4424A ZVP4424C MODE VERTICAL DMOS FET MODE VERTICAL DMOS FET ISSUE 2 SEPTEMBER 94 ISSUE 2 SEPTEMBER 94 FEATURES FEATURES * 240 Volt V * 240 Volt V DS DS *R =9 *R =9 DS(on) DS(on) * Low threshold * Low threshold APPLICATIONS APPLICATIONS * Electronic Hook Switch * Electronic Hook Switch D G G D S S E-Line E-Line REFER TO ZVP4424A FOR GRAPHS TO92 Compatible TO92 Compatible ABSOLUTE MAXIMUM RATINGS. ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V -240 V Drain-Source Voltage V -240 V DS DS Continuous Drain Current at T =25C I -200 mA Continuous Drain Current at T =25C I -200 mA amb D amb D Pulsed Drain Current I -1 A Pulsed Drain Current I -1 A DM DM Gate Source Voltage V V Gate Source Voltage V V 40 40 GS GS Power Dissipation at T =25C P 750 mW Power Dissipation at T =25C P 750 mW amb tot amb tot Operating and Storage Temperature Range T:T -55 to +150 C Operating and Storage Temperature Range T :T -55 to +150 C j stg j stg ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb amb PARAMETER SYMBOL MIN. TYP MAX. UNIT CONDITIONS. PARAMETER SYMBOL MIN. TYP MAX. UNIT CONDITIONS. Drain-Source Breakdown BV -240 V I =-1mA, V =0V Drain-Source Breakdown BV -240 V I =-1mA, V =0V DSS D GS DSS D GS Voltage Voltage Gate-Source Threshold V -0.7 -1.4 -2.0 V ID=-1mA, V = V Gate-Source Threshold V -0.7 -1.4 -2.0 V ID=-1mA, V = V GS(th) DS GS GS(th) DS GS Voltage Voltage Gate-Body Leakage I 100 nA V = 40V, V =0V Gate-Body Leakage I 100 nA V = 40V, V =0V GSS GSS GS DS GS DS Zero Gate Voltage Drain I -10 A V =-240 V, V =0 Zero Gate Voltage Drain I -10 A V =-240 V, V =0 DSS DS GS DSS DS GS Current -100 V =-190V, V =0V, T=125C Current -100 V =-190V, V =0V, T=125C A A DS GS DS GS On-State Drain Current I -0.75 -1.0 A V =-10 V, V =-10V On-State Drain Current I -0.75 -1.0 A V =-10 V, V =-10V D(on) DS GS D(on) DS GS Static Drain-Source R 7.1 9 V =-10V,I =-200mA Static Drain-Source R 7.1 9 V =-10V,I =-200mA DS(on) GS D DS(on) GS D On-State Resistance 8.8 11 V =-3.5V,I =-100mA On-State Resistance 8.8 11 V =-3.5V,I =-100mA GS D GS D Forward g 125 mS V =-10V,I =-0.2A Forward g 125 mS V =-10V,I =-0.2A fs DS D fs DS D Transconductance (1) (2) Transconductance (1) (2) Input Capacitance (2) C 100 200 pF Input Capacitance (2) C 100 200 pF iss iss Common Source Output C 18 25 pF Common Source Output C 18 25 pF oss oss V =-25V, V =0V, f=1MHz V =-25V, V =0V, f=1MHz DS GS DS GS Capacitance (2) Capacitance (2) Reverse Transfer C 515 pF Reverse Transfer C 515 pF rss rss Capacitance (2) Capacitance (2) Turn-On Delay Time (2)(3) t 815 ns Turn-On Delay Time (2)(3) t 815 ns d(on) d(on) Rise Time (2)(3) t 815 ns Rise Time (2)(3) t 815 ns r r V - 50V, I =-0.25A, V - 50V, I =-0.25A, DD D DD D Turn-Off Delay Time (2)(3) t 26 40 ns Turn-Off Delay Time (2)(3) t 26 40 ns V =-10V V =-10V d(off) d(off) GEN GEN Fall Time (2)(3) t 20 30 ns Fall Time (2)(3) t 20 30 ns f f (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator 3-436 3-439 ID - Drain Current (Amps) Normalised RDS(on) and VGS(th) ID - Drain Current (Amps) ce (pF) C-Capacitan Gate Th h res old Voltage VGS(TH) ZVP4424A ZVP4424A TYPICAL CHARACTERISTICS TYPICAL CHARACTERISTICS 300 -1.2 -1.2 0 Note:VGS=0V 300s Pulsed Test VGS=-10V -2 250 -1.0 -1.0 -5V -4 -0.8 -0.8 200 -4V -6 Ciss -0.6 -0.6 150 -8 VDS=-10V VDS= -20V -10 300s Pulsed Test -0.4 -0.4 100 -50V -3V Coss -100V -12 -2.5V -0.2 -0.2 50 -14 -2V Note:ID=- 0.25A Crss 0 0 0 -16 0-2 -4 -6 -8 -10 0 -2 -4 -6 -8 -10 -0.01 -1 -10 -100 01 2 3 4 5 VGS - Gate Source Voltage (Volts) VDS-Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Q-Gate Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage Transfer Characteristics Saturation Characteristics 0.8 400 400 D=1 (D.C.) 150 0.6 300 300 100 D=0.5 200 200 0.4 300s Pulsed Test 300s Pulsed Test VDS=-10V VDS=-10V 50 0.2 100 100 D=0.2 D=0.1 D=0.05 Single Pulse 0 0 0 0 0 50 100 150 0 -0.2 -0.4 -0.6 -0.8 -1.0 0-2 -4 -6 0.0001 0.001 0.01 0.1 1 10 100 VGS-Gate Source Voltage (Volts) Pulse Width (seconds) Tamb - Ambient Temperature (C) ID- Drain Current (Amps) Transconductance v drain current Transconductance v gate-source voltage Maximum transient thermal impedance Derating Curve 100 2.4 VGS=-2V -2.5V VGS=-10V 2.2 ID=0.2A 2.0 -3V 1.8 1.6 1.4 -10V 1.2 10 1.0 0.8 0.6 VGS=VDS 300s Pulsed Test 0.4 ID=-1mA 0.2 1 0.0 -0.01 -0.1 -1 -10 -50 -25 0 25 50 75 100 125 150 ID-Drain Current (Amps) Junction Temperature (C) On-resistance vs Drain Current Normalised RDS(on) and VGS(th) vs Temperature 3-437 3-438 Drain-Source Resistance RDS(on) RDS(on)-Drain Source On Resistance () gfs-Transconductance (mS) gfs-Transconductance (mS) Thermal Resistance (C/W) Ptot-Power Dissipation (mW) VGS-Gate Source Voltage (Volts)