ZVP4424G Green SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Features and Benefits Mechanical Data 240 Volt VDS Case: SOT223 R = 8.8W typical at VGS=-3.5V Case Material: Molded Plastic, Green Molding Compound. DS(on) Low Threshold and Fast Switching UL Flammability Classification Rating 94V-0 Lead-Free Finish RoHS Compliant (Notes 1 & 2) Moisture Sensitivity: Level 1 per J-STD-020 Halogen and Antimony Free. Green Device (Note 3) Terminals: Matte Tin Finish Weight: 0.112 grams (Approximate) Applications Electronic Hook Switches Telecoms and Battery Powered Equipment SOT223 D G S Top View Equivalent Circuit Pin Out - Top View Ordering Information (Note 4) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel ZVP4424GTA ZVP4424 7 8 1,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See ZVP4424G ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Value Unit Drain-Source Voltage -240 V V DSS Gate-Source Voltage 40 V V GSS -480 mA Continuous Drain Current ( T =+25C) I A D Pulsed Drain Current -1.0 A I DM 2.5 W Power Dissipation ( TA =+25C) PD Operating and Storage Temperature Range T , T -55 to +150 C J STG ELECTRICAL CHARACTERISTICS ( TA = +25C, unless otherwise stated.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV -240 - - V V = 0V, I = -1mA DSS GS D -10 A V = -240V, V = 0V DS GS - - Zero Gate Voltage Drain Current T = +25C I J DSS -100 A V = -190V, V = 0V, T =+125C DS GS A Gate-Source Leakage - - 100 nA I V = 40V, V = 0V GSS GS DS On-State Drain Current I -0.75 -1.0 - A V = -10V, V = -10V D(ON) GS DS ON CHARACTERISTICS Gate Threshold Voltage V -0.7 -1.4 -2.0 V V = V , I = -1mA GS(TH) DS GS D 7.1 9 V = -10V, I = -200mA GS D Static Drain-Source On-Resistance R - DS(ON) 8.8 11 V = -3.5V, I = -100mA GS D Forward Transconductance (Notes 5 & 6) 125 - - mS g V = -10V, I = -0.2A fs DS D DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance - 100 200 pF C iss V = -25V, V = 0V, DS GS Output Capacitance - 18 25 pF C oss f = 1.0MHz Reverse Transfer Capacitance - 5 15 pF C rss - 8 15 Turn-On Delay Time (Note 7) t ns D(ON) - 8 15 Turn-On Rise Time (Note 7) t ns R VDD -50V, ID = -0.25A, - 26 40 Turn-Off Delay Time (Note 7) t ns V = -10V D(OFF) GEN - 20 30 Turn-Off Fall Time (Note 7) t ns F Notes: 5. Measured under pulsed conditions. Width=300ms. Duty cycle 2%. 6. Sample test. 7. Switching times measured with 50 source impedance and <5ns rise time on a pulse generator spice parameter data is available upon request for this device. 2 of 6 March 2015 ZVP4424G Diodes Incorporated www.diodes.com Document number:DS33409 Rev. 3 - 2