ZVP4525E6 250V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits High voltage I max D V R max (BR)DSS DS(ON) T = +25C Low on-resistance A Fast switching speed 14 V = -10V -197mA GS -250V Low gate drive 18 V = -3.5V -175mA GS Low threshold Complementary N-channel Type ZVN4525E6 Description SOT23-6 package This 250V enhancement mode P-channel MOSFET provides users Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) with a competitive specification. It offers efficient power handling Halogen and Antimony Free. Green Device (Note 3) capability, high impedance and is free from thermal runaway and Qualified to AEC-Q101 Standards for High Reliability thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage Mechanical Data circuits. Case: SOT26 Case Material: Molded Plastic. SOT89 and SOT223 versions are also available. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Earth Recall and Dialing Switches Solderable per MIL-STD-202, Method 208 Electronic Hook Switches Weight 0.018 grams (Approximate) High Voltage Power MOSFET Drivers Telecom Call Routers Solid State Relays SOT26 D D D G D D G S S Equivalent Circuit Top View Top View Pin-Out Ordering Information (Note 4) Part Number Case Quantity per reel ZVP4525E6TA SOT26 3,000 ZVP4525E6TC SOT26 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZVP4525E6 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage -250 V V DSS Gate-Source Voltage V 40 V GS (Note 5) -197 Continuous Drain Current V = 10V I mA GS D T = +70C (Note 5) -157 A Pulsed Drain Current V = 10V (Note 7) I -1 A GS DM Continuous Source Current (Body Diode) I -0.75 A S Pulsed Source Current (Body Diode) I -1 A SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation 1.1 W (Note 5) P D Linear Derating Factor 8.8 mW/C (Note 5) 113 Thermal Resistance, Junction to Ambient R C/W JA (Note 6) 68 Operating and Storage Temperature Range -55 to +150 C T , T J STG Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 6. For a device surface mounted on FR4 PCB measured at t 5 secs. 7. Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. NB High Voltage Applications For high voltage applications, the appropriate industry sector guidelines should be considered with regard to voltage spacing between conductors. Thermal Characteristics 2 of 7 March 2015 ZVP4525E6 Diodes Incorporated www.diodes.com Document Number DS33411 Rev. 2 - 2 ADVANCE INFORMATION