ZX3CD2S1M832 MPPS Miniature Package Power Solutions 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor V =-20V R = 64m = -3.5A CEO SAT C Schottky Diode V = 40V V = 500mV ( 1A) I =1A R F C DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual comprises an ultra low saturation PNP transistor and a 1A Schottky barrier diode. This excellent combination provides users with highly efficient performance in applications including DC-DC and charging circuits. Users will also gain several other key benefits: Performance capability equivalent to much larger packages 3mm x 2mm Dual Die MLP Improved circuit efficiency & power levels PCB area and device placement savings Cathode Lower package height (0.9mm nom) C Reduced component count FEATURES B Extremely Low Saturation Voltage (-220mV -1A) H characterised up to -6A FE I = -3.5A Continuous Collector Current E C Anode Extremely Low V , fast switching Schottky F 3mm x 2mm MLP APPLICATIONS DC - DC Converters PINOUT Mobile Phones Charging Circuits Motor control ORDERING INFORMATION DEVICE REEL TAPE QUANTITY WIDTH PER REEL ZX3CD2S1M832TA 7 8mm 3000 3mm x 2mm Dual MLP underside view ZX3CD2S1M832TC 13 8mm 10000 DEVICE MARKING 2S1 ISSUE 2 - OCTOBER 2007 1ZX3CD2S1M832 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Transistor Collector-Base Voltage V -25 V CBO Collector-Emitter Voltage V -20 V CEO Emitter-Base Voltage V -7.5 V EBO Peak Pulse Current I -6 A CM Continuous Collector Current (a)(f) I -3.5 A C Base Current I 1000 mA B Power Dissipation at TA=25C (a)(f) P 1.5 W D 12 mW/C Linear Derating Factor Power Dissipation at TA=25C (b)(f) P 2.45 W D Linear Derating Factor 19.6 mW/C Power Dissipation at TA=25C (c)(f) P 1 W D 8 mW/C Linear Derating Factor Power Dissipation at TA=25C (d)(f) P 1.13 W D 9 mW/C Linear Derating Factor Power Dissipation at TA=25C (d)(g) P 1.7 W D Linear Derating Factor 13.6 mW/C Power Dissipation at TA=25C (e)(g) P 3 W D 24 mW/C Linear Derating Factor Storage Temperature Range T -55 to +150 C stg Junction Temperature T 150 C j THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(f) R 83 C/W JA Junction to Ambient (b)(f) R 51 C/W JA Junction to Ambient (c)(f) R 125 C/W JA Junction to Ambient (d)(f) R 111 C/W JA Junction to Ambient (d)(g) R 73.5 C/W JA Junction to Ambient (e)(g) R 41.7 C/W JA Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250C/W giving a power rating of Ptot = 500mW. ISSUE 2 - OCTOBER 2007 2