ZXM61N02F Diodes Incorporated

ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V R =0.18V I =1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive SOT23 package APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH (mm) QUANTITY (inches) PER REEL Top View ZXM61N02FTA 7 8mm embossed 3000 units ZXM61N02FTC 13 8mm embossed 10000 units DEVICE MARKING N02 ISSUE 1 - JUNE 2004 1ZXM61N02F ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 20 V DSS Gate Source Voltage V 12 V GS Continuous Drain Current (V =4.5V T =25C)(b) I 1.7 A GS A D (V =4.5V T =70C)(b) 1.3 GS A Pulsed Drain Current (c) I 7.4 A DM Continuous Source Current (Body Diode) (b) I 0.8 A S Pulsed Source Current (Body Diode) I 7.4 A SM Power Dissipation at T =25C (a) P 625 mW A D Linear Derating Factor 5 mW/C Power Dissipation at T =25C (b) P 806 mW A D Linear Derating Factor 6.4 mW/C Operating and Storage Temperature Range T :T -55 to +150 C j stg THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R 200 C/W JA Junction to Ambient (b) R 155 C/W JA NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t<5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ISSUE 1 - JUNE 2004 2