ZXM61P03FTA Diodes Incorporated

ZXM61P03F 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-30V R =0.35 I =-1.1A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance SOT23 Fast switching speed Low threshold Low gate drive SOT23 package APPLICATIONS DC - DC converters Power management functions Disconnect switches Motor control ORDERING INFORMATION Pin out DEVICE REEL SIZE TAPE WIDTH QUANTITY (inches) (mm) PER REEL ZXM61P03FTA 7 8 embossed 3,000 ZXM61P03FTC 13 8 embossed 10,000 DEVICE MARKING P03 Top view ISSUE 1 - OCTOBER 2005 SEMICONDUCTORS 1ZXM61P03F ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V -30 V DSS Gate- Source Voltage V 20 V GS Continuous Drain Current (V =-10V T =25C)(b) I -1.1 A GS A D (V =-10V T =70C)(b) -0.9 GS A Pulsed Drain Current (c) I -4.3 A DM Continuous Source Current (Body Diode)(b) I -0.88 A S Pulsed Source Current (Body Diode)(c) I -4.3 A SM Power Dissipation at T =25C (a) P 625 mW A D Linear Derating Factor 5 mW/C Power Dissipation at T =25C (b) P 806 mW A D Linear Derating Factor 6.4 mW/C Operating and Storage Temperature Range T :T -55 to +150 C j stg THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R 200 C/W JA Junction to Ambient (b) R 155 C/W JA NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ISSUE 1 - OCTOBER 2005 SEMICONDUCTORS 2