NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART ZXM62N02E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance Max I D BV Max R DSS DS(ON) Fast Switching Speed T = +25C A 0.1 V = 4.5V 3.2A Low Threshold GS 20V 0.125 V = 2.7V 2.8A GS Low Gate Drive SOT26 Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description and Applications Halogen and Antimony Free. Green Device (Note 3) This high-density MOSFET from Diodes Incorporated utilizes a Qualified to AEC-Q101 Standards for High Reliability unique structure that combines the benefits of low, on-resistance with fast switching speed. This makes it ideal for high-efficiency, low Mechanical Data voltage power management applications such as: Case: SOT26 DC-DC Converters Case Material: Molded Plastic, Green Molding Compound Power Management Functions UL Flammability Classification Rating 94V-0 Disconnect Switches Moisture Sensitivity: Level 1 per J-STD-020 Motor Control Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.015 grams (Approximate) SOT26 Top View Pin Out Top-view Device Symbol Ordering Information (Note 4) Part Number Reel Size (inch) Tape Width (mm) Quantity Per Reel ZXM62N02E6TA 7 8 3,000 ZXM62N02E6TC 13 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART ZXM62N02E6 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GS (Note 6) 3.2 Continuous Drain Current V = 4.5V I A GS D T = +70C (Note 6) 2.6 A Pulsed Drain Current (Note 7) I 18 A DM Continuous Source Current (Body Diode) (Note 6) I 2.1 A S Pulsed Source Current (Body Diode) I 18 A SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) 1.1 W P D Linear Derating Factor 8.8 mW/C 1.7 Power Dissipation (Note 6) W P D Linear Derating Factor mW/C 13.6 (Note 5) 113 Thermal Resistance, Junction to Ambient C/W R JA (Note 6) 73 Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device surface mounted on FR-4 PCB measured at t 5 seconds. 7. Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. Thermal Characteristics Refer Note 7 Refer Note 6 Refer Note 7 Refer Note 7 Refer Note 6 2 of 7 ZXM62N02E6 June 2018 Diodes Incorporated www.diodes.com Datasheet Number: DS33480 Rev. 3 - 3 NEW PRODUCT