ZXM62P02E6 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Low On-resistance D BV R DSS DS(ON) T = +25C A Fast Switching Speed -20V 200m V = -4.5V -2.3A GS Low Threshold Low Gate Drive Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with Mechanical Data fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. Case: SOT26 Case Material: Molded Plastic, Green Molding Compound. Applications UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 DC - DC Converters Terminals Connections: See Diagram Below Power Management Functions Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Disconnect Switches Solderable per MIL-STD-202, Method 208 e3 Motor Control Weight: 0.018 grams (Approximate) SOT26 D D D D G S Top View Pin Out Equivalent Circuit Top View Ordering Information (Note 4) Part Number Reel Size (inch) Tape Width (mm) Quantity Per Reel ZXM62P02E6TA 7 8 3,000 ZXM62P02E6TC 13 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXM62P02E6 Absolute Maximum Ratings Characteristic Symbol Value Unit Drain-Source Voltage -20 V V DSS Gate-Source Voltage V 12 V GSS -2.3 T = +25C (Note 6) A Continuous Drain Current V = -4.5V I A GS D T = +70C (Note 6) -1.7 A Pulsed Drain Current (Note 7) -13 A I DM Continuous Source Current (Body Diode) (Note 6) I -1.9 A S Pulsed Source Current (Body Diode) (Note 7) -13 A I SM 1.1 W Power Dissipation at T = +25C A (Note 5) P D Linear Derating Factor 8.8 mW/C W 1.7 Power Dissipation at T = +25C A (Note 6) P D Linear Derating Factor 13.7 mW/C Operating and Storage Temperature Range T , T -55 to +150 C J STG Thermal Resistance Characteristic Symbol Value Unit (Note 5) 113 Junction to Ambient R C/W JA (Note 6) 73 Electrical Characteristics ( T = +25C, unless otherwise stated.) A Characteristic Symbol Min Typ Max Unit Test Condition STATIC Drain-Source Breakdown Voltage BV -20 V I = -250A, V = 0V DSS D GS Zero Gate Voltage Drain Current -1 A I V = -20V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 12V, V = 0V GSS GS DS Gate Threshold Voltage -0.7 V V I = -250A, V = V GS(TH) D DS GS 0.2 V = -4.5V, I = -1.6A GS D Static Drain-Source On-Resistance (Note 8) R DS(ON) 0.375 V = -2.7V, I = -0.8A GS D Forward Transconductance (Note 10) g 1.5 S V = -10V, I = -0.8A fs DS D DYNAMIC (Note 10) Input Capacitance 320 pF C iss V = -15V, V = 0V DS GS Output Capacitance C 150 pF oss f = 1MHz Reverse Transfer Capacitance 75 pF C rss SWITCHING (Notes 9 and10) Total Gate Charge 5.8 nC Q g V = -16V, V = -4.5V DS GS Gate-Source Charge Q 1.25 nC gs I = -1.6A D (Refer to test circuit) Gate-Drain Charge 2.8 nC Q gd Turn-On Delay Time t 4.1 ns D(ON) V = -10V, I = -1.6A, R = 6, DD D G Turn-On Rise Time 15.4 ns t R R = 6.1 D Turn-Off Delay Time t 12.0 ns D(OFF) (Refer to test circuit) Turn-Off Fall Time 19.2 ns t F SOURCE-DRAIN DIODE T = +25C, I =-1.6A, J S Diode Forward Voltage (Note 8) -0.95 V V SD V =0V GS Reverse recovery time (Note 10) 22.5 ns tRR T = +25C, I =-1.6A, J F di/dt= 100A/s Reverse recovery charge (Note 10) 10.4 nC Q RR Notes: 5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device surface mounted on FR-4 PCB measured at t 5 secs. 7. Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. 8. Measured under pulsed conditions. Width= 300s duty cycle 2%. 9. Switching characteristics are independent of operating junction temperatures. 10. For design aid only, not subject to production testing. 2 of 7 March 2015 ZXM62P02E6 www.diodes.com Diodes Incorporated Document Number DS33482 Rev. 2 - 2 ADVANCE INFORMATION