ZXM62P03E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast Switching Speed I D V R (BR)DSS DS(on) Low On-Resistance T = +25C A Low Threshold 0.15 V = -10V -2.6A GS Low Gate Drive -30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 0.23 V = -4.5V -1.5A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for Case: SOT-26 high-efficiency power management applications. Case Material: Molded Plastic UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Solderable per MIL-STD-202, DC-DC Converters Method 208 Power Management Functions Weight: 0.015 grams (Approximate) Disconnect Switches Motor Control D SOT-26 G S Equivalent Circuit Top View Pin Out - Top View Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXM62P03E6TA 2P03 7 8 3,000 Units ZXM62P03E6TC 2P03 13 8 10,000 Units Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXM62P03E6 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GS T = +25C (Note 5) -1.5 A Continuous Drain Current A V = -4.5V I GS D -1.2 T = +70C (Note 5) A Pulsed Drain Current (Note 7) -7.4 A I DM Continuous Source Current (Body Diode) I -0.54 A S Pulsed Source Current (Body Diode) I -7.4 A SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) 625 mW P D Linear Derating Factor 5 mW/C Power Dissipation (Note 6) 806 mW P D Linear Derating Factor 6.4 mW/C Thermal Resistance, Junction to Ambient (Note 5) R 113 C/W JA Thermal Resistance, Junction to Ambient (Note 6) R 73 C/W JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions 6. For a device surface mounted on FR4 PCB measured at t 5 seconds. 7. Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV -30 V I = -250A, V = 0V DSS D GS Zero Gate Voltage Drain Current I -1 A V = -30V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS Gate Threshold Voltage -1 V V I = -250A, V = V GS(th) D DS GS 0.15 V = -10V, I = -1.6A GS D Static Drain-Source On-Resistance (Note 8) R DS (ON) 0.23 V = -4.5V, I = -0.8A GS D Forward Transconductance (Notes 8 & 10) 1.1 S g V = -10V, I = -0.8A fs DS D Diode Forward Voltage (Note 8) V -0.95 V T = +25C, I = -1.6A, V = 0V SD J S GS Reverse Recovery Time (Note 10) t 19.9 ns rr T = +25C, I = -1.6A, J F di/dt = 100A/s Reverse Recovery Charge (Note 10) Q 13 nC rr DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C 330 iss V = -25V, V = 0V DS GS Output Capacitance C 120 pF oss f = 1.0MHz Reverse Transfer Capacitance C 45 rss Turn-On Delay Time (Note 9) 2.8 t d(on) Turn-On Rise Time (Note 9) 6.4 t V = -15V, I = -1.6A, r DD D ns Turn-Off Delay Time (Note 9) 13.9 R 6.2 R 25 t G D d(off) Turn-Off Fall Time (Note 9) 10.3 t f Total Gate Charge (Note 9) 10.2 Q g V = -24V, V = -10V, DS GS Gate-Source Charge (Note 9) Q 1.5 nC gs I = -1.6A D Gate-Drain Charge (Note 9) Q 3 gd Notes: 8. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 9. Switching characteristics are independent of operating junction temperature. 10. For design aid only, not subject to production testing. 2 of 7 ZXM62P03E6 March 2015 Diodes Incorporated www.diodes.com Document Number: DS33483 Rev. 3 - 2