A Product Line of Diodes Incorporated ZXM64P03X 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Fast switching speed Max I D V Max R (BR)DSS DS(on) Low on-resistance T = 25 C A Low threshold 75m V = -10V -3.8A GS -30V Low gate drive 100m V = -4.5V -3.3A GS Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for Mechanical Data high-efficiency power management applications. Case: MSOP8 Case Material: Molded Plastic, UL Flammability Classification Applications Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 DC - DC converters Terminals: Matte Tin Finish Solderable per MIL-STD-202, Power management functions Method 208 Disconnect switches Weight: 0.028 grams (approximate) Motor control MSOP8 D G S Top View Top View Equivalent Circuit Pin Out Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXM64P03XTA ZXM64P03 7 12 1,000 Units Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See A Product Line of Diodes Incorporated ZXM64P03X Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GS T = +25C (Note 5) A -3.8 Continuous Drain Current A V = 4.5V I GS D -3.0 T = +70C (Note 5) A Pulsed Drain Current (Note 7) -1.9 A I DM Continuous Source Current (Body Diode) (Note 6) I -2.3 A S Pulsed Source Current (Body Diode) (Note 7) I -19 A SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) 1.1 W P D Linear Derating Factor 8.8 mW/C Power Dissipation (Note 6) 1.8 W P D Linear Derating Factor 14.4 mW/C Thermal Resistance, Junction to Ambient (Note 5) R 113 C/W JA Thermal Resistance, Junction to Ambient (Note 6) R 70 C/W JA Thermal Resistance, Junction to Ambient (Note 8) R 39.8 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions 6. For a device surface mounted on FR4 PCB measured at t 10 secs. 7. Repetitive rating pulse width limited by pulse current limited by maximum junction temperature. 8. Thermal resistance from junction to solder-point (at the end of the Drain lead). Thermal Characteristics 2 of 7 October 2012 ZXM64P03X Diodes Incorporated www.diodes.com Document Number DS33487 Rev. 2 - 2