ZXM66P03N8TA Diodes Incorporated

NOT RECOMMENDED FOR NEW DESIGN USE DMP3036SSS ZXM66P03N8 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-30V R =0.025 I =-7.9A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package APPLICATIONS DC - DC converters Power management functions Disconnect switches Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXM66P03N8TA 7 12mm 500 units S D S D ZXM66P03N8TC 13 12mm 2500 units S D DEVICE MARKING ZXM Top View 66P03 ISSUE 1 - JANUARY 2006 SEMICO NDUC T OR S 1 4 3 2 1 5 6 7 8 ZXM66P03N8 ABSOLUTE MAXIMUM RAPARTAMINGETERS SYMBOL LIMIT UNIT Drain-Source Voltage V -30 V DSS Gate- Source Voltage V 20 V GS I -7.9 A Continuous Drain Current V =-10V T =25C(b) D GS A -6.3 V =-10V T =70C(b) GS A -6.25 V =-10V T =25C(a) GS A Pulsed Drain Current (c) I -28 A DM Continuous Source Current (Body Diode)(b) I -4.1 A S Pulsed Source Current (Body Diode)(c) I -28 A SM Power Dissipation at T =25C (a) P 1.56 W A D 12.5 mW/C Linear Derating Factor Power Dissipation at T =25C (b) P 2.5 W A D 20 mW/C Linear Derating Factor Operating and Storage Temperature Range T :T -55 to +150 C j stg THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R 80 C/W JA Junction to Ambient (b) R 50 C/W JA NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 101-s - pulse width limited by maximum junction temperature. ISSUE 1 - JANUARY 2006 SEMI CO NDUC TO RS 2