ZXMC10A816N8 100V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features 100V Complementary in SO-8 Package I (A)max D BV R ()max Device DSS DS(ON) Low On-Resistance T = +25C A Fast Switching Speed 0.230 V = 10V 2.1 GS Low Voltage (V = 4.5V) Gate Drive Q1 100V GS 0.300 V = 4.5V 1.9 GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 0.235 V = -10V -2.2 GS Halogen and Antimony Free. Green Device (Note 3) Q2 -100V Qualified to AEC-Q101 Standards for High Reliability 0.320 V = -4.5V -1.9 GS Mechanical Data Description Case: SO-8 This new generation complementary dual MOSFET features low on- Case Material: Molded Plastic, Green Molding Compound. UL resistance achievable with low gate drive. Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminals: Finish - Matte Tin Annealed over Copper Lead Frame. e3 Solderable per MIL-STD-202, Method 208 DC Motor Control Weight: 0.074 grams (Approximate) Backlighting SO-8 D1 D2 S1 D1 G1 D1 G1 G2 S2 D2 S1 S2 D2 G2 Q1 N-Channel Q2 P-Channel Top view Top View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Reel Size (inches) Tape Width (mm) Quantity Per Reel ZXMC10A816N8TA 7 12 500 ZXMC10A816N8TC 13 12 2,500 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXMC10A816N8 Maximum Ratings ( T = +25C, unless otherwise specified.) A N-channel P-channel Parameter Symbol Unit Q1 Q2 Drain-Source Voltage 100 -100 V V DSS Gate-Source Voltage 20 20 V V GS Continuous Drain Current V = 10V T = +25C (Notes 6, 8) GS A 2.1 -2.2 V = 10V T = +70C (Notes 6, 8) 1.7 -1.8 GS A 1.7 -1.7 A V = 10V T = +25C (Notes 5, 8) I GS A D 2.0 -2.0 V = 10V T = +25C (Notes 5, 9) GS A 2.3 -2.4 V = 10V T = +25C (Notes 8, 10) GS L 9.4 -10.5 A Pulsed Drain Current V = 10V T = +25C (Notes 7, 8) I GS A DM Continuous Source Current (Body Diode) at T = +25C (Notes 6, 8) I 3.0 -3.1 A A S Pulsed Source Current (Body Diode) at T = +25C (Notes 7, 8) I 9.4 -10.5 A A SM Avalanche Current (Note 11) L = 0.1mH I 1.2 -12 A AS 1.3 W Power Dissipation at T = +25C (Notes 5, 8) A P D 10.0 Linear Derating Factor mW/C 1.8 W Power Dissipation at T = +25C (Notes 5, 9) A P D 14.2 Linear Derating Factor mW/C 2.1 Power Dissipation at T = +25C (Notes 6, 8) W A P D 16.7 Linear Derating Factor mW/C 2.4 2.6 W Power Dissipation at T = +25C (Notes 8, 10) L P D 18.9 20.4 Linear Derating Factor mW/C Operating and Storage Temperature Range -55 to +150 T , T C J STG Thermal Characteristics Parameter Symbol Value Unit Junction to Ambient (Notes 5, 8) 100 C/W R JA Junction to Ambient (Notes 5, 9) 70 C/W R JA Junction to Ambient (Notes 6, 8) 60 C/W R JA Junction to Lead (Notes 8, 10) 53 49 C/W R JL Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 6. Same as note (5), except the device is measured at t 10 sec. 7. Same as note (5), except the device is pulsed with D = 0.02 and pulse width 300s. The pulse current is limited by the maximum junction temperature. 8. For a dual device with one active die. 9. For a device with two active die running at equal power. 10. Thermal resistance from junction to solder-point (at the end of the drain lead) the device is operating in a steady-state condition. 11. IAS rating is based on low frequency and duty cycles to keep TJ = +25C. 2 of 11 ZXMC10A816N8 March 2017 Diodes Incorporated www.diodes.com Document number: DS33497 Rev. 3 - 2