ZXMC3A16DN8TA Diodes Incorporated

ZXMC3A16DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V = 30V R = 0.035 I = 6.4A (BR)DSS DS(ON) D P-Channel V = -30V R = 0.048 I = -5.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SO8 Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package APPLICATIONS Motor Drive LCD backlighting Q1 = N-CHANNEL Q2 = P-CHANNEL ORDERING INFORMATION DEVICE REEL TAPE QUANTITY WIDTH PER REEL ZXMC3A16DN8TA 7 12mm 500 units PINOUT ZXMC3A16DN8TC 13 12mm 2500 units DEVICE MARKING ZXMC 3A16 Top view ISSUE 1 - OCTOBER 2005 1ZXMC3A16DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL N-Channel P-Channel UNIT Drain-Source Voltage V 30 -30 V DSS Gate-Source Voltage V 20 20 V GS (b)(d) Continuous Drain Current V =10V T =25 C I 6.4 -5.4 A GS A D (b)(d) V =10V T =70 C 5.1 -4.3 A GS A (a)(d) V =10V T =25 C 4.9 -4.1 A GS A (c) Pulsed Drain Current I 30 -25 A DM (b) Continuous Source Current (Body Diode) I 3.4 -3.2 A S (c) Pulsed Source Current (Body Diode) I 30 -25 A SM (a)(d) Power Dissipation at TA=25C P 1.25 W D 10 mW/C Linear Derating Factor (a)(e) Power Dissipation at TA=25C P 1.8 W D 14 mW/C Linear Derating Factor (b)(d) Power Dissipation at TA=25C P 2.1 W D 17 mW/C Linear Derating Factor Operating and Storage Temperature Range T :T -55 to +150 C j stg THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT (a)(d) Junction to Ambient R 100 C/W JA (b)(e) Junction to Ambient R 70 C/W JA (b)(d) Junction to Ambient R 60 C/W JA Notes (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300s - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For dual device with 2 active die running at equal power. ISSUE 1 - OCTOBER 2005 2