X-On Electronics has gained recognition as a prominent supplier of ZXMC3AMCTA MOSFETs across the USA, India, Europe, Australia, and various other global locations. ZXMC3AMCTA MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.
We are delighted to provide the ZXMC3AMCTA from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXMC3AMCTA and other electronic components in the MOSFETs category and beyond.
A Product Line of Diodes Incorporated ZXMC3AMC 30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low profile package, for thin applications I max D Low R , thermally efficient package JA Device V R max (BR)DSS DS(on) T = 25C 2 A 6mm footprint, 50% smaller than TSOP6 and SOT23-6 (Notes 4 & 7) Low on-resistance Fast switching speed 120m V = 10V 3.7A GS Q1 30V Lead-Free, RoHS Compliant (Note 1) 180m V = 4.5V 3.0A GS Halogen and Antimony Free.Gree Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability 210m V = -10V -2.7A GS Q2 -30V 330m V = -4.5V -2.2A GS Mechanical Data Case: DFN3020B-8 Description and Applications Terminals: Pre-Plated NiPdAu leadframe Nominal package height: 0.8mm This MOSFET has been designed to minimize the on-state resistance UL Flammability Rating 94V-0 (R ) and yet maintain superior switching performance, making it DS(on) Moisture Sensitivity: Level 1 per J-STD-020 ideal for high efficiency power management applications. Solderable per MIL-STD-202, Method 208 MOSFET gate drive Weight: 0.013 grams (approximate) LCD backlight inverters Motor control Portable applications DFN3020B-8 D1 D2 D2 D2 D1 D1 G1 G2 D2 D1 S1 S2 G2 S2 G1 S1 Q1 N-Channel Q2 P-Channel Pin 1 Top View Bottom View Bottom View Equivalent Circuit Pin-Out Ordering Information (Note 3) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMC3AMCTA C01 7 8 3000 Notes: 1. No purposefully added lead 2. Diodes Inc sGree policy can be found on our website at A Product Line of Diodes Incorporated ZXMC3AMC Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol N-channel Q1 P-channel Q2 Unit -30 Drain-Source Voltage V 30 DSS V Gate-Source Voltage 20 20 V GSS (Notes 4 & 7) 3.7 -2.7 Continuous Drain Current V = 10V T = 70C (Notes 4 & 7) I 3.0 -2.2 GS A D A (Notes 3 & 7) 2.9 -2.1 Pulsed Drain Current (Notes 6 & 7) 13 -9.2 V = 10V I GS DM Continuous Source Current (Body diode) (Notes 4 & 7) 3.2 -2.8 I S Pulse Source Current (Body diode) (Notes 6 & 7) 13 -9.2 I SM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol N-channel Q1 P-channel Q2 Unit 1.50 (Notes 3 & 7) 12 2.45 (Notes 4 & 7) Power Dissipation 19.6 W P D Linear Derating Factor 1.13 mW/C (Notes 5 & 7) 9 1.70 (Notes 5 & 8) 13.6 (Notes 3 & 7) 83.3 (Notes 4 & 7) 51.0 Thermal Resistance, Junction to Ambient R JA (Notes 5 & 7) 111 C/W (Notes 5 & 8) 73.5 Thermal Resistance, Junction to Lead (Notes 7 & 9) R 17.1 JL Operating and Storage Temperature Range T , T -55 to +150 C J STG 2 Notes: 3. For a device surface mounted on 28mm x 28mm (8cm ) FR4 PCB with high coverage of single sided 2oz copper, in still air conditions the device is measured when operating in a steady-state condition. The heatsink is split in half with the exposed drain pads connected to each half. 4. Same as note (3) except the device is measured at t < 5 sec. 2 5. Same as note (3), except the device is surface mounted on 31mm x 31mm (10cm ) FR4 PCB with high coverage of single sided 1oz copper. 6. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300s. The pulse current is limited by the maximum junction temperature. 7. For a dual device with one active die. 8. For dual device with 2 active die running at equal power. 9. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 11 December 2010 ZXMC3AMC Diodes Incorporated www.diodes.com Document number: DS35088 Rev. 1 - 2
the importance of reliable and high-quality components cannot be overstated. Among these components, connectors play a pivotal role in ensuring the integrity and functionality of electronic systems. The 26-03-4121 Mo
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