X-On Electronics has gained recognition as a prominent supplier of ZXMC3F31DN8TA MOSFETs across the USA, India, Europe, Australia, and various other global locations. ZXMC3F31DN8TA MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.
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ZXMC3F31DN8 30V SO8 Complementary dual enhancement mode MOSFET Summary V Q (BR)DSS G Device R ( ) I (A) DS(on) D (V) (nC) 0.024 V = 10V 7.3 GS Q1 30 12.9 0.039 V = 4.5V 5.7 GS 0.045 V = -10V 5.3 GS Q2 -30 12.7 0.080 V = -4.5V 4 GS Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (R ) and yet maintain superior DS(on) switching performance making it ideal for power management and battery charging functions. Features Low on-resistance 4.5V gate drive capability D1 D2 Low profile SOIC package Applications G1 G2 DC-DC Converters S1 S2 SMPS Load switching switches Q1 N-Channel Q2 P-Channel Motor control Backlighting Ordering information Device Reel size Tape width Quantity (inches) (mm) per reel S1 D1 N ZXMC3F31DN8TA 7 12 500 D1 G1 S2 D2 Device marking P ZXMC G2 D2 3F31 Top view Issue 1 - September 2008 1 www.zetex.com Diodes Incorporated 2008 www.diodes.com ZXMC3F31DN8 Absolute maximum ratings Parameter Symbol N- P- Unit channel channel Q1 Q2 V DSS Drain-Source voltage 30 -30 V V Gate-Source voltage GS V 20 20 (b)(d) 7.3 5.3 A I D Continuous Drain current V = 10V T =25 C GS A (b)(d) 5.9 4.3 V = 10V T =70 C GS A (a)(d) 5.7 4.1 V = 10V T =25 C GS A (a)(e) 6.8 4.9 V = 10V T =25 C GS A (f)(d) 7.8 5.7 V = 10V T =25 C GS L (c) I DM 33 23 A Pulsed Drain current (b)(d) 3.5 3.2 A Continuous Source current (Body diode) I S (c)(d) 33 23 A Pulsed Source current (Body diode) I SM (a)(d) 1.25 W Power dissipation at T =25 C P A D 10 mW/ C Linear derating factor (a)(e) 1.8 W Power dissipation at T =25 C A P D Linear derating factor 14 mW/ C (b)(d) 2.1 W Power dissipation at T =25 C P A D 17 Linear derating factor mW/ C (f) (d) 2.35 W Power dissipation at T =25 C P L D 19 mW/ C Linear derating factor T , T Operating and storage temperature range j stg -55 to 150 C Thermal resistance Parameter Symbol Value Unit (a)(d) R 100 C/W Junction to ambient JA (a)(e) R 70 C/W Junction to ambient JA (b)(d) R 60 Junction to ambient C/W JA (f) (d) R 53 C/W Junction to lead JL NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) Mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us pulse width limited by maximum junction temperature. (d) For a device with one active die. (e) For a device with two active die running at equal power. (f) Thermal resistance from junction to solder-point (at the end of the drain lead). Issue 1 - September 2008 2 www.zetex.com Diodes Incorporated 2008 www.diodes.com
