ZXMC4559DN8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Low Input Capacitance D Device V R (BR)DSS DS(on) max T = +25C A Low On-Resistance Q2 60V 55m V = 10V 4.7A GS Fast Switching Speed Q1 -60V 105m V = -10V -3.9A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET has been designed to minimize the on- Mechanical Data state resistance (R ) and yet maintain superior switching DS(on) Case: SO-8 performance, making it ideal for high efficiency power management Case Material: Molded Plastic, Green Molding Compound. applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections: See Diagram DC-DC Converters Terminals: Finish Tin Finish annealed over Copper leadframe Power Management Functions Solderable per MIL-STD-202, Method 208 Backlighting Weight: 0.074 grams (approximate) D2 D1 S2 D2 G2 D2 G2 G1 S1 D1 G1 D1 S2 S1 TOP VIEW Top View N-Channel MOSFET Internal Schematic P-Channel MOSFET Ordering Information (Note 4) Part Number Compliance Case Packaging ZXMC4559DN8TA Standard SO-8 500/Tape & Reel ZXMC4559DN8TC Standard SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXMC4559DN8 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Q2 Value Q1 Units Drain-Source Voltage V 60 -60 V DSS Gate-Source Voltage V 20 20 V GSS SteadyState I 3.6 -2.6 A D (Note 5) Continuous Drain Current V = 10V GS t<10s I 4.7 -3.9 A D (Note 6) Maximum Body Diode Forward Current at t<10s (Note 6) 3.4 -3.2 A I S Pulsed Drain Current (300s pulse, duty cycle = 2%) I 22.2 -18.3 A DM Pulsed Source Current (Body Diode) (300s pulse, duty cycle = 2%) I 22.2 -18.3 A SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Power Dissipation 1.25 W P D Linear Derating Factor (Note 5) 10 mW/C Power Dissipation 2.1 W P D Linear Derating Factor (Note 6) 17 mW/C Thermal Resistance, Junction to Ambient (Note 5) R 100 JA C/W Thermal Resistance, Junction to Ambient (Note 6) R 58 JA Operating and Storage Temperature Range T T -55 to +150 C J, STG 2 of 11 March 2014 ZXMC4559DN8 Diodes Incorporated www.diodes.com Document number: DS34498 Rev. 7- 2 ADVANCE INFORMATION NEW PRODUCT