X-On Electronics has gained recognition as a prominent supplier of ZXMD63N03XTA MOSFETs across the USA, India, Europe, Australia, and various other global locations. ZXMD63N03XTA MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

ZXMD63N03XTA Diodes Incorporated

Hot ZXMD63N03XTA electronic component of Diodes Incorporated
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Part No.ZXMD63N03XTA
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET Dual 30V N Chl HDMOS
Datasheet: ZXMD63N03XTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3688 ea
Line Total: USD 0.37 
Availability - 334
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
334
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3688
10 : USD 0.307
30 : USD 0.2761
100 : USD 0.2453
500 : USD 0.2274
1000 : USD 0.2173

896
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 2.442
10 : USD 2.068
100 : USD 1.65
250 : USD 1.518
500 : USD 1.386
1000 : USD 1.166
2000 : USD 1.111
5000 : USD 1.0758
10000 : USD 1.0406

1
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.848
5 : USD 1.68
14 : USD 1.274
37 : USD 1.204

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Product
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the ZXMD63N03XTA from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXMD63N03XTA and other electronic components in the MOSFETs category and beyond.

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ZXMD63N03X DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Low On-Resistance D V R Package (BR)DSS DS(ON) T = +25C Low Threshold A (Notes 5 & 6) Fast Switching Speed 135m V = 10V 2.3A GS Low Gate Drive 30V MSOP-8 200m V = 4.5V 1.9A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This MOSFET has been designed to minimize the on-state resistance Mechanical Data (R ) and yet maintain superior switching performance, making it DS(on) Case: MSOP-8 ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 e3 Terminals: Matte Tin Finish DC-DC Converters Weight: 0.008 grams (approximate) Power Management Functions Motor Control Disconnect Switches MSOP8 Top View Device Symbol Pin-Out Top View Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMD63N03XTA ZXM63N03 7 12 1,000 ZXMD63N03XTC ZXM63N03 13 12 4,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXMD63N03X Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS V = 4.5V T = +25C (Note 5 & 6) Steady GS A 2.3 Continuous Drain Current I A D State 1.8 V = 4.5V T = +70C (Note 5 & 6) GS A Pulsed Drain Current (Notes 6 & 7) 14 A I DM Continuous Source Current (Body Diode) (Notes 5 & 6) 1.5 A I S Pulsed Source Current (Body Diode) (Notes 6 & 7) I 14 A SM Thermal Characteristics Characteristic Symbol Value Unit (Notes 6 & 8) 0.87 Power Dissipation (Notes 5 & 6) P 1.25 W D (Notes 8 & 9) 1.04 (Notes 6 & 8) 143 Thermal Resistance, Junction to Ambient (Notes 5 & 6) R 100 C/W JA (Notes 8 & 9) 120 Thermal Resistance, Junction to Leads (Note 10) R 84.9 C/W JL Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 5. For a device surface mounted on FR4 PCB measured at t 10 sec. 6. For device with one active die. 7. Repetitive rating - 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300s pulse width limited by maximum junction temperature. 8. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 9. For device with two active die running at equal power. 10. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 8 March 2014 ZXMD63N03X Diodes Incorporated www.diodes.com Document number: DS33501 Rev. 2 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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