X-On Electronics has gained recognition as a prominent supplier of ZXMHC6A07N8TC MOSFETs across the USA, India, Europe, Australia, and various other global locations. ZXMHC6A07N8TC MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.
We are delighted to provide the ZXMHC6A07N8TC from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXMHC6A07N8TC and other electronic components in the MOSFETs category and beyond.
A Product Line of Diodes Incorporated ZXMHC6A07N8 60V SO8 Complementary enhancement mode MOSFET H-Bridge Summary I D Device V Q R (BR)DSS G DS(on) T = 25 C A 0.25 V = 10V 1.8A GS N-CH 60V 3.2nC 0.35 V = 4.5V 1.5A GS 0.40 V = -10V -1.4A GS P-CH -60V 5.1nC 0.60 V = -4.5V -1.2A GS P1S/P2S Description This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. P1G P2G Features P1D/N1D P2D/N2D 2 x N + 2 x P channels in a SOIC package Applications N1G N2G DC Motor control DC-AC Inverters N1S/N2S Ordering information Device Reel size Tape width Quantity (inches) (mm) per reel ZXMHC6A07N8TC 13 12 2,500 Device marking ZXMHC 6A07 Issue 1.0 - March 2009 1 www.diodes.com Diodes Incorporated ZXMHC6A07N8 Absolute maximum ratings Parameter Symbol N- P- Unit channel channel V Drain-Source voltage DSS 60 -60 V V Gate-Source voltage GS V 20 20 (b) 1.80 -1.42 A I D Continuous Drain current V = 10V T =25 C GS A (b) 1.40 -1.28 V = 10V T =70 C GS A (a) 1.39 -1.28 V = 10V T =25 C GS A (f) 1.42 -1.33 V = 10V T =25 C GS L (c) I DM 7.10 -6.03 A Pulsed Drain current V = 10V T =25 C GS A (b) 1.00 -1.00 A Continuous Source current (Body diode) at T =25 C I A S (c) 7.10 -6.03 A Pulsed Source current (Body diode) at T =25 C I A SM (a) 0.87 W Power dissipation at T =25 C P A D Linear derating factor 6.94 mW/ C (b) 1.36 W Power dissipation at T =25 C P A D Linear derating factor 10.9 mW/ C (f) 0.90 W Power dissipation at T =25 C L P D mW/ C Linear derating factor 7.19 Operating and storage temperature range T , T -55 to 150 j stg C Thermal resistance Parameter Symbol Value Unit (a) R 144 Junction to ambient C/W JA (b) R 92 C/W Junction to ambient JA (d) R 106 Junction to ambient C/W JA (e) 254 R C/W Junction to ambient JA (f) R 139 C/W Junction to lead JL NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions with the heat-sink split into two equal areas (one for each drain connection) the device is measured when operating in a steady-state condition with one active die. (b) Same as note (a), except the device is measured at t 10 sec. (c) Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300 s. The pulse current is limited by the maximum junction temperature. (d) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions with the heat-sink split into two equal areas (one for each drain connection) the device is measured when operating in a steady-state condition with one active die. (e) For a device surface mounted on minimum copper 1.6mm FR4 PCB, in still air conditions the device is measured when operating in a steady-state condition with one active die. (f) Thermal resistance from junction to solder-point (at the end of the drain lead) the device is operating in a steady-state condition with one active die. Issue 1.0 - March 2009 2 www.diodes.com Diodes Incorporated
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