A Product Line of Diodes Incorporated ZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-Resistance I max D Low Threshold V R Max (BR)DSS DS(on) T = 25 C A (Note 6) Fast Switching Speed 700m V = 10V 1.4A Low Gate Drive GS 100V Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 900m V = 6V 1.2A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications This MOSFET has been designed to minimize the on-state resistance Mechanical Data (R ) and yet maintain superior switching performance, making it DS(on) Case: SOT89 ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Power Management functions Terminals: Matte Tin Finish Motor control Weight: 0.052 grams (approximate) Disconnect switches SOT89 D G S Top View Device symbol Top View Pin-Out Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMN10A07ZTA 7N10 7 12 1,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See A Product Line of Diodes Incorporated ZXMN10A07Z Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS V = 10V T = 25C (Note 6) 1.4 GS A Steady Continuous Drain Current V = 10V T = 70C (Note 6) I 1.1 A GS A D State 1.0 V = 10V T = 25C (Note 5) GS A Pulsed Drain Current (Note 7) I 4.2 A DM Continuous Source Current (Body Diode) (Note 6) I 2.1 A S Pulsed Source Current (Body Diode) (Note 7) 4.2 A I SM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit Power Dissipation (Note 5) 1.5 W P D Linear Derating Factor 12 mW/C Power Dissipation (Note 6) 2.6 W P D Linear Derating Factor 21 mW/C Thermal Resistance, Junction to Ambient (Note 5) R 83.3 C/W JA Thermal Resistance, Junction to Ambient (Note 6) R 47.4 C/W JA Thermal Resistance, Junction to Leads (Note 8) R 6.36 C/W JL Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device surface mounted on FR4 PCB measured at t 10 sec. 7. Repetitive rating - 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300s pulse width limited by maximum junction temperature. 8. Thermal resistance from junction to solder-point (at the end of the drain lead). Thermal Characteristics 10 R 1.50 DS(on) Limited 1.25 1 1.00 DC 1s 0.75 100m 100ms 0.50 10ms 1ms Single Pulse 0.25 100s 10m T =25C amb 0.00 110 100 0 20 406080 100 120 140 160 V Drain-Source Voltage (V) Temperature (C) DS Safe Operating Area Derating Curve 90 T =25C 80 amb Single Pulse 100 T =25C 70 amb 60 50 D=0.5 40 10 30 Single Pulse D=0.2 20 D=0.05 10 D=0.1 0 1 100 1m 10m 100m 1 10 100 1k 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation 2 of 7 June 2012 ZXMN10A07Z Diodes Incorporated www.diodes.com Document number DS33565 Rev. 7- 2 ADVANCE INFORMATION I Drain Current (A) Thermal Resistance (C/W) D Max Power Dissipation (W) Maximum Power (W)