X-On Electronics has gained recognition as a prominent supplier of ZXMN10A11G MOSFETs across the USA, India, Europe, Australia, and various other global locations. ZXMN10A11G MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

ZXMN10A11G Diodes Incorporated

ZXMN10A11G electronic component of Diodes Incorporated

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Part No.	ZXMN10A11G
Manufacturer:	Diodes Incorporated
Category:	MOSFETs
Description:	MOSFET, N, SOT-223 Low-noise MOSFET, Logic Level Gate Driver, 1-channel B-C-S.
Datasheet:
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

100: USD 0.4807 ea
Line Total: USD 48.07

Availability - 0

MOQ: 100 Multiples: 1
Pack Size: 1

ZXMN10A11G More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 30 Dec to Fri. 03 Jan MOQ : 100 Multiples : 1	100 : USD 0.4807 500 : USD 0.4371

Specifications

Manufacturer Diodes Incorporated Diodes Incorporated
Product Category MOSFETs MOSFETs
Transistor Polarity N Channel N Channel
Brand Diodes Incorporated Diodes Incorporated
Continuous Drain Current Id 1.8 A 1.8 A
Drain Source Voltage Vds 100 V 100 V
On Resistance Rdson 0.6 Ohms 0.6 Ohms
Rdson Test Voltage Vgs 10 V 10 V
Threshold Voltage Vgs 4 V 4 V
Power Dissipation Pd 3.9 W 3.9 W
Transistor Case Style SOT - 223 SOT - 223
No. Of Pins 3Pins 3Pins
Operating Temperature Max 150 C 150 C
Msl MSL 1 - Unlimited MSL 1 - Unlimited
Svhc Lead (15 - Jan - 2019) Lead (15 - Jan - 2019)
Current Id Max 2.4 A 2.4 A
Current Temperature 25 C 25 C
Junction Temperature Tj Max 150 C 150 C
Junction Temperature Tj Min - 55 C - 55 C
No. Of Transistors 1 1
On State Resistance Max 600 mOhms 600 mOhms
Operating Temperature Min - 55 C - 55 C
Operating Temperature Range - 55 C to + 150 C - 55 C to + 150 C
Power Dissipation Ptot Max 2 W 2 W
Pulse Current Idm 5.8 A 5.8 A
Smd Marking ZXMN10A11 ZXMN10A11
Voltage Vds Typ 100 V 100 V
Voltage Vgs Max 20 V 20 V
Voltage Vgs Rds On Measurement 10 V 10 V
Voltage Vgs Th Max 4 V 4 V
Voltage Vgs Th Min 2 V 2 V

We are delighted to provide the ZXMN10A11G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXMN10A11G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The ZXMN10A11G is a N-Channel MOSFET Transistor manufactured by Diodes Incorporated. It is a two terminal device with a drain and a gate. It has a very low on-resistance value, making it well suited for switching applications in high frequency power converters. It has high efficiency, low on-resistance, high frequency capability and excellent thermal performance.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

DIO may also be referenced as

Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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