X-On Electronics has gained recognition as a prominent supplier of ZXMN10A11GTA MOSFETs across the USA, India, Europe, Australia, and various other global locations. ZXMN10A11GTA MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

ZXMN10A11GTA Diodes Incorporated

ZXMN10A11GTA electronic component of Diodes Incorporated
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See Product Specifications
Part No.ZXMN10A11GTA
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: N-Channel 100 V 1.7A (Ta) 2W (Ta) Surface Mount SOT-223-3
Datasheet: ZXMN10A11GTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4524 ea
Line Total: USD 0.45 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
555
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 263
Multiples : 1
263 : USD 0.494
500 : USD 0.315

970
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.273
3000 : USD 0.273
4000 : USD 0.273
10000 : USD 0.273
15000 : USD 0.273

2691
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7997
10 : USD 0.5467
100 : USD 0.3916
500 : USD 0.3102
1000 : USD 0.2981
2000 : USD 0.2827
5000 : USD 0.2695

328
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.12
5 : USD 0.5796
25 : USD 0.5124
39 : USD 0.4382
106 : USD 0.4144

101850
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.3158

555
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 263
Multiples : 1
263 : USD 0.494

2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.5913

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the ZXMN10A11GTA from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXMN10A11GTA and other electronic components in the MOSFETs category and beyond.

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The ZXMN10A11GTA is a surface-mount SOT-223-3 N-channel MOSFET transistor manufactured by Diodes Incorporated. It is rated for 100 V, with a maximum continuous drain source voltage of 100 V and a maximum pulsed drain source voltage of 115 V. It has a maximum gate-source voltage of ±20 V. It has a maximum continuous drain current of 1.7 A with a 2 W (Ta) power dissipation. It has a maximum thermal resistance of 88°C/W junction-to-ambient in the surface-mount SOT-223-3 package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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