A Product Line of Diodes Incorporated ZXMN20B28K 200V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production I D V R High avalanche energy pulse withstand capability (BR)DSS DS(on) T = 25C A Low gate drive voltage (Logic level capable) 750m VGS = 10V 2.3A Low input capacitance 200V Low on-resistance 780m VGS = 5V 2.3A Fast switching speed Green Component and RoHS compliant (Note 1) Description and Applications Qualified to AEC-Q101 Standards for High Reliability This MOSFET features low on-resistance, fast switching and a high avalanche withstand capability, making it ideal for high efficiency Mechanical Data power management applications. Case: TO252-3L SLIC line drivers for VoIP applications Case Material: Molded Plastic Green Molding Compound, Transformer driving switch UL Flammability Classification Rating 94V-0 (Note 1) Moisture Sensitivity: Level 1 per J-STD-020 Power management functions Terminal Connections: See Diagram Motor control Terminals: Matte Tin Finish annealed over Copper leadframe. Uninterrupted power supply Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (approximate) D TO252-3L D G D S GS Top View Pin Out Top View Equivalent Circuit Ordering Information (Note 1) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMN20B28KTC See below 13 16 2,500 Note: 1. Diodes, Inc. defines Green products as those which are Eu RoHS compliant and contain no halogens or antimony compounds further information about Diodes Inc.s Green Policy can be found on our website. For packaging details, go to our website. Marking Information ZXMN ZXMN = Product Type Marking Code, Line 1 20B28 20B28 = Product Type Marking Code, Line 2 YYWW YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52) 1 of 8 October 2009 ZXMN20B28K Diodes Incorporated www.diodes.com Document Number DS31984 Rev. 2 - 2 A Product Line of Diodes Incorporated ZXMN20B28K Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source voltage 200 V V DSS Gate-Source voltage V V 20 GS Single Pulsed Avalanche Energy (Note 7) E 73 mJ AS Single Pulsed Avalanche Current (Note 7) I 5.5 A AS Repetitive Avalanche Energy (Note 4) E 4.5 mJ AR Repetitive Avalanche Current (Note 4) I 5.5 A AR (Note 3) 2.3 Continuous Drain current V = 10V T = 70C (Note 3) I 1.8 A GS A D (Note 2) 1.5 Pulsed Drain current V = 10V (Note 4) I 17.3 A GS DM Continuous Source current (Body diode) (Note 2) I 5.7 A S Pulsed Source current (Body diode) (Note 4) 17.3 A I SM Thermal Characteristics Characteristic Symbol Value Unit 4.3 (Note 2) 34.4 Power dissipation 10.2 W (Note 3) P D Linear derating factor 76.0 mW/C 2.2 (Note 6) 17.4 (Note 2) 29.1 Thermal Resistance, Junction to Ambient (Note 3) 12.3 R C/W JA (Note 6) 57.3 Thermal Resistance, Junction to Lead (Note 5) 1.15 R C/W JL Operating and storage temperature range T , T -55 to 150 C J STG Notes: 2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions the device is measured when operating in a steady-state condition. 3. Same as note 2, except the device is measured at t 10 sec. 4. Same as note 2, except the device is operating in a repetitive state with pulse width and duty cycle limited by maximum junction temperature. 5. Thermal resistance from junction to solder-point (at the end of the drain lead). 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with the high coverage single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 7. UIS in production with L = 4.83mH, I = 5.5A, R = 25, V = 100V, starting T = 25C. AS G DD J 2 of 8 October 2009 ZXMN20B28K Diodes Incorporated www.diodes.com Document Number DS31984 Rev. 2 - 2