ZXMN2A01E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-resistance Max I D Fast Switching Speed V Max R (BR)DSS DS(ON) T = +25C A Low Threshold (Note 6) Low Gate Drive 20V 3.1A 120m V = 4.5V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications This new generation of trench MOSFETs from Zetex utilizes a unique Mechanical Data structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low Case: SOT26 voltage, power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 DC - DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. Disconnect Switches Solderable per MIL-STD-202, Method 208 e3 Motor Control Weight: 0.016 grams (Approximate) D SOT26 D 1 6 D D D 2 5 G 3 4 G S S Pin-Out (Top View) Top View Equivalent Circuit Ordering Information (Note 4) Part Number Marking Reel Size (inch) Tape Width (mm) Quantity Per Reel ZXMN2A01E6TA 2A1 7 8 3000 ZXMN2A01E6TC 2A1 13 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXMN2A01E6 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS T = +25C (Note 6) 3.1 A Continuous Drain Current V = 10V T = +70C (Note 6) I 2.5 A GS A D T = +25C (Note 5) 2.5 A Pulsed Drain Current (Note 7) 11 A I DM Continuous Source Current (Body Diode) (Note 6) 2.4 A I S Pulsed Source Current (Body Diode) (Note 7) 11 A I SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit W Power Dissipation at T = +25C (Note 5) 1.1 A P D Linear derating factor 8.8 mW/C W Power Dissipation at T = +25C (Note 6) 1.7 A P D Linear Derating Factor 13.6 mW/C Junction to Ambient (Note 5) 113 C/W R JA Junction to Ambient (Note 6) 70 C/W R JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Notes: 5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device surface mounted on FR-4 PCB measured at t 10 secs. 7. Repetitive rating 25mm x 25mm FR-4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage V 20 - - V I = 250 A, V = 0V (BR)DSS D GS - Zero Gate Voltage Drain Current - 1 A I V = 20V, V = 0V DSS DS GS Gate-Body Leakage - - 100 nA I V = 12V, V = 0V GSS GS DS Gate-Source Threshold Voltage 0.7 - - V V I = 250 A, V = V GS(TH) D DS GS 0.120 V = 4.5V, I =4A GS D Static Drain-Source On-State Resistance (Note 8) R - - DS(ON) 0.225 V = 2.5V, I =1.5A GS D Forward Transconductance (Notes 8 &10) g - 6.1 - S V = 10V, I =4A fs DS D Diode Forward Voltage (Note 8) V - 0.9 0.95 V T = +25C , I = 3.2A, V = 0V SD J S GS DYNAMIC CHARACTERISTICS Input Capacitance (Note 10) C - 303 - pF iss V = 15V, V = 0V DS GS Output Capacitance (Note 10) C - 59 - pF oss f = 1MHz Reverse Transfer Capacitance (Note 10) C - 30 - pF rss Total Gate Charge (Notes 9 & 10) - 3.0 - nC Q g V = 4.5V, V = 10V GS DS Gate-Source Charge (Notes 9 & 10) - 0.8 - nC Q gs I = 4A D Gate-Drain Charge (Notes 9 & 10) - 1.0 - nC Q gd Turn-On Delay Time (Notes 9 & 10) - 2.49 - ns t D(ON) Turn-On Rise Time (Notes 9 & 10) - 5.21 - ns t V = 10V, V = 5V R DD GS Turn-Off Delay Time (Notes 9 & 10) t - 7.47 - ns I = 4A, R = 6.0 D(OFF) D G Turn-Off Fall Time (Notes 9 & 10) t - 4.62 - ns F Reverse Recovery Time (Note 10) t - 23 - ns RR T = +25C, I =4A, J F di/dt= 100A/s Reverse Recovery Charge (Note 10) Q - 5.65 - nC RR Notes: 8. Measured under pulsed conditions. Width=300s. Duty cycle 2%. 9. Switching characteristics are independent of operating junction temperature. 10. For design aid only, not subject to production testing. 2 of 7 ZXMN2A01E6 March 2015 Diodes Incorporated www.diodes.com Datasheet Number: DS33512 Rev. 4 - 2 NEW PRODUCT