X-On Electronics has gained recognition as a prominent supplier of ZXMN2B03E6TA MOSFET across the USA, India, Europe, Australia, and various other global locations. ZXMN2B03E6TA MOSFET are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

ZXMN2B03E6TA Diodes Incorporated

Hot ZXMN2B03E6TA electronic component of Diodes Incorporated
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Part No.ZXMN2B03E6TA
Manufacturer: Diodes Incorporated
Category: MOSFET
Description: Diodes Incorporated MOSFET 20V N-Ch 4.6 MOSFET wlow gate drive cap
Datasheet: ZXMN2B03E6TA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3251 ea
Line Total: USD 0.33

Availability - 86
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
86
Ship by Tue. 30 Jul to Fri. 02 Aug
MOQ : 1
Multiples : 1
1 : USD 0.3251
10 : USD 0.2122
30 : USD 0.1045
100 : USD 0.1028

1577
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 0.897
10 : USD 0.774
100 : USD 0.5359
500 : USD 0.4485
1000 : USD 0.3818
3000 : USD 0.3381
6000 : USD 0.337

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Ciss - Input Capacitance
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the ZXMN2B03E6TA from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXMN2B03E6TA and other electronic components in the MOSFET category and beyond.

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ZXMN2B03E6 20V SOT26 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-resistance Max I D V Max R (BR)DSS DS(ON) Fast Switching Speed T = +25C A Low Gate Drive Capability 0.040 V = 4.5V 5.4A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20V Halogen and Antimony Free. Green Device (Note 3) 4.6A 0.055 VGS = 2.5V 4.0A 0.075 V = 1.8V GS Mechanical Data Description and Applications Case: SOT26 This new generation trench MOSFET from Zetex features low on- Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 resistance achievable with low gate drive. DC - DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 Disconnect Switches Weight: 0.015 grams (Approximate) Motor Control SOT26 Top View Pinout Top-view Device Symbol Ordering Information (Note 4) Part Number Reel Size (inch) Tape Width (mm) Quantity Per Reel ZXMN2B03E6TA 7 8 3000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXMN2B03E6 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 8 V GS T = +25C (Note 6) 5.4 A Continuous Drain Current V = 4.5V T = +70C (Note 6) I 4.3 A GS A D T = +25C (Note 5) 4.3 A Pulsed Drain Current (Note 7) 26 A I DM Continuous Source Current (Body Diode) (Note 6) 2.8 A I S Pulsed Source Current (Body Diode) (Note 7) 26 A I SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit W Power Dissipation at T = +25C (Note 5) P 1.1 A D Linear derating factor (Note 5) 8.8 mW/C W Power Dissipation at T = +25C (Note 6) P 1.7 A D Linear derating factor (Note 6) 13.7 mW/C Junction to Ambient (Note 5) 113 C/W R JA Junction to Ambient (Note 6) 73 C/W R JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Notes: 5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device surface mounted on FR-4 PCB measured at t 10 secs. 7. Repetitive rating 25mm x 25mm FR-4 PCB, D = 0.02, pulse width 300s - pulse width limited by maximum junction temperature. Thermal Characteristics 2 of 7 ZXMN2B03E6 March 2015 Diodes Incorporated www.diodes.com Datasheet Number: DS33521 Rev. 2 - 2 NEW PRODUCT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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PAM(Diodes Inc)
PER
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PERICOM SEMI
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ZTX

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