ZXMN2F30FHQ 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D Low Input Capacitance V R max (BR)DSS DS(ON) T = +25C A Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 45m V = 4.5V 4.9 A GS Halogen and Antimony Free. Green Device (Note 3) 20V Qualified to AEC-Q101 Standards for High Reliability 65m V = 2.5V 4.1 A GS PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Case: SOT23 automotive applications. It is qualified to AEC-Q101, supported by a Case Material: Molded Plastic, Green Molding Compound. PPAP and is ideal for use in: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 LED Lighting Terminals: Finish Matte Tin Annealed over Copper Leadframe. Charging applications in portable equipment Solderable per MIL-STD-202, Method 208 DC-DC Converters Terminals Connections: See Diagram Below Motor Control Weight: 0.009 grams (Approximate) D D G G S S Top View Top View Internal Schematic Ordering Information (Note 5) Part Number Case Packaging ZXMN2F30FHQTA SOT23 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXMN2F30FHQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 4.9 A Continuous Drain Current (Note 7) V = 4.5V I A GS D State 4.0 T = +70C A Maximum Continuous Body Diode Forward Current (Note 7) 1.6 A I S Pulsed Drain Current (10s pulse, duty cycle = 1%) 22.6 A I DM Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 6) P 0.96 W D Steady State Thermal Resistance, Junction to Ambient (Note 6) R 131 C/W JA Total Power Dissipation (Note 7) P 1.4 W D Thermal Resistance, Junction to Ambient (Note 7) Steady State 89 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 20 - - V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I - - 1 A V = 20V, V = 0V J DSS DS GS Gate-Source Leakage I - - 100 nA V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 0.6 0.9 1.5 V V = V , I = 250A GS(TH) DS GS D - 45 V = 4.5V, I = 2.5A GS D Static Drain-Source On-Resistance - m R DS(ON) - 65 V = 2.5V, I = 2.0A GS D Diode Forward Voltage - 0.75 1.2 V V V = 0V, I = 1.25A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance - 452 - pF C iss V = 10V, V = 0V DS GS Output Capacitance - 102 - pF C oss f = 1.0MHz Reverse Transfer Capacitance - 58 - pF C rss Total Gate Charge - 4.8 - nC Q g Gate-Source Charge - 1 - nC Q V = 10V, V = 4.5V, I = 3.5A gs DS GS D Gate-Drain Charge Q - 1.2 - nC gd Turn-On Delay Time t - 2.9 - ns D(ON) Turn-On Rise Time t - 5.6 - ns R V = 10V, V = 4.5V, DS GS Turn-Off Delay Time t - 19.4 - ns R = 6, I = 1A D(OFF) G D Turn-Off Fall Time - 10.2 - ns tF Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout. 7. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 ZXMN2F30FHQ July 2016 Diodes Incorporated www.diodes.com Document number: DS38981 Rev. 1 - 2 NEW PRODUCT