ZXMN2F34FHTA Diodes Incorporated

ZXMN2F34FH 20V SOT23 N-channel enhancement mode MOSFET Summary V R ( ) I (A) (BR)DSS DS(on) D 20 0.060 V = 4.5V 4.0 GS 0.120 V = 2.5V 2.9 GS Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with low (2.5V) gate drive. Features D Low on-resistance 2.5V gate drive capability SOT23 package G Applications S Buck/Boost DC-DC Converters Motor Control LED Lighting Ordering information S DEVICE Reel size Tape width Quantity (inches) (mm) per reel D ZXMN2F34FHTA 7 8 3000 G Device marking KNB Top view Issue 2 - February 2008 1 www.zetex.com Zetex Semiconductors plc 2008ZXMN2F34FH Absolute maximum ratings Parameter Symbol Limit Unit Drain source voltage V 20 V DSS Gate source voltage V 12 V GS (b) I 4.0 A Continous Drain Current V =4.5 T =25 C D GS A (b) 3.3 A V =4.5 T =70 C GS A (a) 3.4 A V =4.5 T =25 C GS A (c) I 18.6 A Pulsed drain current DM (b) I 2.1 A Continuous source current (body diode) S (c) I 18.6 A Pulsed source current (body diode) SM (a) P 0.95 W Power dissipation at T =25 C D A 7.6 mW/C Linear derating factor (b) P 1.4 W Power dissipation at T =25 C D A 11 mW/C Linear derating factor Operating and storage temperature range T , T -55 to 150 C j stg Thermal resistance Parameter Symbol Limit Unit (a) R 131 C/W Junction to ambient JA (b) R 89 C/W Junction to ambient JA (d) R 68 C/W Junction to lead JL NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 5 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature. (d) Thermal resistance from junction to solder-point (at end of drain lead). Issue 2 - February 2008 2 www.zetex.com Zetex Semiconductors plc 2008