ZXMN3A01E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Low Input Capacitance D V R (BR)DSS DS(ON) Max T = +25C Low On-Resistance A Fast Switching Speed 0.12 V = 10V 3.0A GS 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 0.18 V = 4.5V 2.5A GS Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: SOT26 (R ) and yet maintain superior switching performance, making it DS(ON) Cas e Mat erial: Molded P las t ic, Green Molding Com pound ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections: See Diagram DC-DC Converters Terminals: Finish Tin Finish Annealed over Copper Leadframe Power Management Functions Solderable per MIL-STD-202, Method 208 Backlighting Weight: 0.018 grams (Approximate) SOT26 D 1 6 D D 2 5 D 3 4 G S Top View Top View Equivalent Circuit Pin Configuration Ordering Information (Note 4) Part Number Case Packaging ZXMN3A01E6TA SOT26 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXMN3A01E6 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 30 V V DSS Gate-Source Voltage 20 V V GSS T = +25C (Note 6) A 3.0 Steady Continuous Drain Current, V = 10V T = +70C (Note 6) I 2.4 A GS A D State 2.4 TA = +25C (Note 5) Maximum Body Diode Forward Current (Note 6) 2.4 A I S Pulsed Drain Current (Note 7) 10 A I DM Pulsed Source Current (Note 7) 10 A I SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation 1.1 W T = +25C (Note 5) P A D Linear Derating Factor 8.8 mW/C Total Power Dissipation 1.7 W T = +25C (Note 6) P A D Linear Derating Factor 13.6 mW/C Steady State (Note 5) 113 C/W Thermal Resistance, Junction to Ambient R JA Steady State (Note 6) 70 C/W Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 0.5 A V = 30V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V 1.0 V V = V , I = 250A GS(TH) DS GS D 0.106 0.12 V = 10V, I = 2.5A GS D Static Drain-Source On-Resistance (Note 8) R DS(ON) 0.18 V = 4.5V, I = 2.0A GS D Diode Forward Voltage (Note 8) 0.84 0.95 V V V = 0V, I = 1.7A SD GS S Forward Transconductance (Notes 8 & 10) 3.5 S g V = 4.5V, I = 2.5A fs DS D DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C 190 iss V = 25V, V = 0V DS GS Output Capacitance pF C 38 oss f = 1.0MHz Reverse Transfer Capacitance C 20 rss Total Gate Charge (V = 5.0V) Q 2.3 GS g Total Gate Charge (V = 10V) Q 3.9 GS g nC V = 15V, I = 2.5A DS D Gate-Source Charge Q 0.6 gs Gate-Drain Charge Q 0.9 gd Turn-On Delay Time 1.7 t D(ON) Turn-On Rise Time 2.3 t V = 10V, V = 15V, R = 6.0, R GS DD G ns Turn-Off Delay Time 6.6 I = 2.5A t D D(OFF) Turn-Off Fall Time 2.9 t F Body Diode Reverse Recovery Time 17.7 ns t RR I = 2.5A, dI/dt = 100A/ s F Body Diode Reverse Recovery Charge 13.0 nC Q RR Notes: 5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device surface mounted on FR-4 PCB measured at t 5 secs. 7. Repetitive rating 25mm x 25mm FR-4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. 8. Measured under pulsed conditions. Width= 30 0s . Du t y c ycl e 2%. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 ZXMN3A01E6 April 2015 Diodes Incorporated www.diodes.com Document number: DS33527 Rev. 5 - 2 ADVANCE INFORMATION ADVANCED INFORMATION