A Product Line of Diodes Incorporated ZXMN3A01Z 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-Resistance I max D Low Threshold V R Max (BR)DSS DS(on) T = 25C A (Note 5) Fast Switching Speed Low Gate Drive 120m V = 10V 3.3A GS Lead Free/RoHS Compliant (Note 1) 30V 180m V = 4.5V 2.7A GS Gree Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications Case: SOT89 This MOSFET has been designed to minimize the on-state resistance Case Material: Molded Plastic, Green Molding Compound. (R ) and yet maintain superior switching performance, making it DS(on) UL Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish DC-DC Converters Weight: 0.052 grams (approximate) Power Management functions Motor control SOT89 D G S Device symbol Pin-out Top Top View Ordering Information (Note 3) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMN3A01ZTA 1S8 7 12 1,000 Notes: 1. No purposefully added lead. 2. Diodes Incs Green Policy can be found on our website at A Product Line of Diodes Incorporated ZXMN3A01Z Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS V = 10V T = 25C (Note 5) GS A 3.3 Steady Continuous Drain Current 2.7 A V = 10V T = 75C (Note 5) I GS A D State 2.2 V = 10V T = 75C (Note 4) GS A Pulsed Drain Current (Note 6) I 20 A DM Continuous Source Current (Body Diode) (Note 5) I 3.3 A S Pulsed Source Current (Body Diode) (Note 6) I 20 A SM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit (Note 4) 0.97 W Power Dissipation P D (Note 5) 2.12 W (Note 4) 129 C/W Thermal Resistance, Junction to Ambient R JA (Note 5) 59 C/W Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 5. Device mounted on 25mm X 25mm FR-4 substrate PC board with 2oz copper 6. Single pulse rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us pulse width limited by maximum junction temperature. 1,000 100 Single Pulse P = 10s W R = 57 C/W JA R DS(on) R = r * R JA(t) (t) JA Limited T - T = P * R 10 JA JA(t) 100 DC 1 P = 10s W P = 1s W P = 100ms W 10 P = 10ms W P = 1ms 0.1 T = 150C W J(max) P = 100s T = 25C W A V = 10V GS Single Pulse 2 DUT on 1in. Board 1 0.01 0.0001 0.001 0.01 0.1 1 10 100 1,000 0.1 1 10 100 t1, PULSE DURATION TIME (sec) V , DRAIN-SOURCE VOLTAGE (V) DS Fig. 1 Single Pulse Maximum Power Dissipation Fig. 2 SOA, Safe Operation Area 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 R (t) = r(t) * R D = 0.005 JA JA R = 57C/W JA Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIMES (sec) Fig. 3 Transient Thermal Resistance 2 of 6 February 2012 ZXMN3A01Z Diodes Incorporated www.diodes.com Document number DS35722 Rev. 1 - 2 ADVANCE INFORMATION P , PEAK TRANSIENT POIWER (W) (PK) r(t), TRANSIENT THERMAL RESISTANCE I, DRAIN CURRENT (A) D