ZXMN3A02X8TA Diodes Incorporated

ZXMN3A02X8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =30V R =0.025 I =6.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE REEL TAPE QUANTITY SIZE WIDTH PER REEL ZXMN3A02X8TA 7 12mm 1000 units ZXMN3A02X8TC 13 12mm 4000 units DEVICE MARKING Top View ZXMN 3A02 ISSUE 1 - JANUARY 2002 1ZXMN3A02X8 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage 30 V V DSS Gate Source Voltage V 20 V GS 6.7 A Continuous Drain Current V =10V T =25C (b) I GS A D 5.4 V =10V T =70C (b) GS A 5.3 V =10V T =25C (a) GS A Pulsed Drain Current (c) 24 A I DM Continuous Source Current (Body Diode) (b) I 3.2 A S Pulsed Source Current (Body Diode) (c) I 24 A SM 1.1 W Power Dissipation at T =25C (a) P A D Linear Derating Factor 8.8 mW/C Power Dissipation at T =25C (b) P 1.8 W A D 14.4 mW/C Linear Derating Factor Operating and Storage Temperature Range T :T -55 to +150 C j stg THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) 113 C/W R JA Junction to Ambient (b) 70 C/W R JA NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. ISSUE 1 - JANUARY 2002 2