X-On Electronics has gained recognition as a prominent supplier of ZXMN3A03E6TA MOSFETs across the USA, India, Europe, Australia, and various other global locations. ZXMN3A03E6TA MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

ZXMN3A03E6TA Diodes Incorporated

ZXMN3A03E6TA electronic component of Diodes Incorporated
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Part No.ZXMN3A03E6TA
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: N-Channel 30 V 3.7A (Ta) 1.1W (Ta) Surface Mount SOT-23-6
Datasheet: ZXMN3A03E6TA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.638 ea
Line Total: USD 0.64 
Availability - 32460
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.7878
10 : USD 0.685
30 : USD 0.6206
100 : USD 0.5554
500 : USD 0.4903
1000 : USD 0.4779

32460
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.638
10 : USD 0.5665
100 : USD 0.4092
500 : USD 0.3531
1000 : USD 0.3333
3000 : USD 0.3036
6000 : USD 0.3025
24000 : USD 0.2948

2286
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 328
Multiples : 1
328 : USD 0.4588

34920
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.3583

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Height
Length
Product
Series
Transistor Type
Type
Width
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the ZXMN3A03E6TA from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXMN3A03E6TA and other electronic components in the MOSFETs category and beyond.

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ZXMN3A03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-resistance Max I D V Max R (BR)DSS DS(ON) Fast Switching Speed T = +25C A Low Threshold 30V 0.050 V = 10V 4.6A GS Low Gate Drive Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications This new generation of TRENCH MOSFET from Zetex utilizes a unique structure that combines the benefits of low on-resistance with Mechanical Data fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. Case: SOT26 DC - DC converters Case Material: Molded Plastic, Green Molding Compound. Power Management Functions UL Flammability Classification Rating 94V-0 Disconnect Switches Moisture Sensitivity: Level 1 per J-STD-020 Motor Control Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.015 grams (Approximate) SOT26 Top View Pinout Top-view Device Symbol Ordering Information (Note 4) Part Number Reel Size (inch) Tape Width (mm) Quantity Per Reel ZXMN3A03E6TA 7 8 3000 ZXMN3A03E6TC 13 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXMN3A03E6 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage 20 V VGS 4.6 T = +25C (Note 6) A Continuous Drain Current 3.7 A V = 10V T = +70C (Note 6) I GS A D 3.7 T = +25C (Note 5) A Pulsed Drain Current (Note 7) 17 A I DM Continuous Source Current (Body Diode) (Note 6) I 2.6 A S Pulsed Source Current (Body Diode) (Note 7) I 17 A SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 1.1 W Power Dissipation at TA = +25C (Note 5) PD 8.8 Linear derating factor (Note 5) mW/C 1.7 W Power Dissipation at T = +25C (Note 6) P A D 13.6 Linear derating factor (Note 6) mW/C Junction to Ambient (Note 5) 113 R C/W JA Junction to Ambient (Note 6) 73 R C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device surface mounted on FR-4 PCB measured at t 10 secs. 7. Repetitive rating 25mm x 25mm FR-4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. Thermal Characteristics 2 of 7 ZXMN3A03E6 March 2015 Diodes Incorporated www.diodes.com Datasheet Number: DS33531 Rev. 4 - 2 NEW PRODUCT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX
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