ZXMN3A06DN8TA Diodes Incorporated

ZXMN3A06DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V = 30V R = 0.035 I = 6.2A (BR)DSS DS(ON) D DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SO8 Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control ORDERING INFORMATION DEVICE REEL TAPE QUANTITY PINOUT WIDTH PER REEL ZXMN3A06DN8TA 7 12mm 500 units ZXMN3A06DN8TC 13 12mm 2500 units DEVICE MARKING ZXMN 3A06D Top view ISSUE 2 - OCTOBER 2002 1ZXMN3A06DN8 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 30 V DSS Gate Source Voltage V 20 V GS Continuous Drain Current (V =10V T =25C)(b)(d) I 6.2 A GS A D (V =10V T =70C)(b)(d) 5.0 GS A (V =10V T =25C)(a)(d) 4.9 GS A Pulsed Drain Current (c) I 30 A DM Continuous Source Current (Body Diode) (b) I 3.7 A S Pulsed Source Current (Body Diode)(c) I 30 A SM Power Dissipation at T =25C (a)(d) P 1.25 W A D Linear Derating Factor 10 mW/C Power Dissipation at T =25C (a)(e) P 1.80 W A D Linear Derating Factor 14.5 mW/C Power Dissipation at T =25C (b)(d) P 2.1 W A D Linear Derating Factor 17.3 mW/C Operating and Storage Temperature Range T :T -55 to +150 C j stg THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(d) R 100 C/W JA Junction to Ambient (a)(e) R 69 C/W JA Junction to Ambient (b)(d) R 58 C/W JA NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. (d) For device with one active die (e) For device with two active die running at equal power. ISSUE 2 - OCTOBER 2002 2