ZXMN3A14FQ 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance Max I MAX D BV Max R MAX DSS DS(on) Fast switching speed TA = 25C Low gate charge 3.2A 65m V = 10V GS Low threshold 30V 2.6A 95m V = 4.5V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Description and Applications This MOSFET is designed to meet the stringent requirements of Case: SOT23 Automotive applications. It is qualified to AEC-Q101, supported by a Case Material: Molded Plastic, Green Molding Compound. PPAP and is ideal for use in: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 DC - DC Converters Terminals: Finish Matte Tin Annealed over Copper Leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 Disconnect Switches Terminals Connections: See Diagram Below Motor Control Weight: 0.009 grams (Approximate) SOT23 S D G Top View Top View Equivalent Circuit Pin Out Ordering Information (Note 5) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMN3A14FQTA 314 7 8 3,000 Units Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXMN3A14FQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GS (Note 7) 3.9 Continuous Drain Current V = 10V T = 70C (Note 7) I 3.2 A GS A D 3.2 (Note 6) Pulsed Drain Current (Note 8) 18 A I DM Continuous Source Current (Body Diode) (Note 7) 2.3 A I S Pulsed Source Current (Body Diode) (Note 8) 18 A I SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 6) 1 W P D Linear Derating Factor 8 mW/C Power Dissipation (Note 7) 1.5 W P D Linear Derating Factor 12 mW/C Thermal Resistance, Junction to Ambient (Note 6) R 125 C/W JA Thermal Resistance, Junction to Ambient (Note 7) R 83 C/W JA Thermal Resistance, Junction to Leads (Note 9) R 70.44 C/W JL Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Notes: 6. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions 7. For a device surface mounted on FR4 PCB measured at t 5 secs. 8. Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300s - pulse current limited by maximum junction temperature. 9. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 8 ZXMN3A14FQ August 2016 Diodes Incorporated www.diodes.com Document Number DS39100 Rev. 1 - 2