A Product Line of Diodes Incorporated ZXMN3A14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance Max I D Fast switching speed BV Max R DSS DS(on) T = 25C A Low gate charge (Note 4) Low threshold Totally Lead-Free & Fully RoHS compliant (Note 1) 65m V = 10V 3.2A GS Halogen and Antimony Free. Green Device (Note 2) 30V Qualified to AEC-Q101 Standards for High Reliability 95m V = 4.5V 2.6A GS Description and Applications Mechanical Data This MOSFET utilizes a unique structure that combines the benefits Case: SOT23 of low on-resistance with fast switching speed, making it ideal for Case Material: Molded Plastic, UL Flammability Classification high-efficiency power management applications. Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 DC - DC converters Terminals: Matte Tin Finish annealed over Copper leadframe Power management functions Solderable per MIL-STD-202, Method 208 Disconnect switches Weight: 0.008 grams (approximate) Motor control SOT23 S D G Top View Top View Equivalent Circuit Pin Out Ordering Information (Note 3) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMN3A14FTA 314 7 8 3000 Units Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Halogen and Antimony freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 3. For more packaging details, go to our website at A Product Line of Diodes Incorporated ZXMN3A14F Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage 30 V V DSS Gate-Source Voltage 20 V V GS (Note 5) 3.9 Continuous Drain Current V = 10V T = 70C (Note 5) I 3.2 A GS A D 3.2 (Note 4) Pulsed Drain Current (Note 6) I 18 A DM Continuous Source Current (Body Diode) (Note 5) 2.3 A I S Pulsed Source Current (Body Diode) (Note 6) 18 A I SM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit Power Dissipation (Note 4) 1 W P D Linear Derating Factor 8 mW/C Power Dissipation (Note 5) 1.5 W P D Linear Derating Factor 12 mW/C Thermal Resistance, Junction to Ambient (Note 4) 125 C/W R JA Thermal Resistance, Junction to Ambient (Note 5) R 83 C/W JA Thermal Resistance, Junction to Leads (Note 7) R 70.44 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions 5. For a device surface mounted on FR4 PCB measured at t 5 secs. 6. Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300s - pulse current limited by maximum junction temperature. 7. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 8 April 2012 ZXMN3A14F Diodes Incorporated www.diodes.com Document Number DS33536 Rev. 2 - 2