ZXMN3B14FTA Diodes Incorporated

ZXMN3B14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE SUMMARY V =30V : R ( )=0.08 I =3.5A (BR)DSS DS on D DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive SOT23 package APPLICATIONS DC-DC converters Power management functions Disconnect switches Motor control PINOUT ORDERING INFORMATION DEVICE REEL TAPE QUANTITY SIZE WIDTH PER REEL ZXMN3B14FTA 7 8mm 3,000 units ZXMN3B14FTC 13 8mm 10,000 units DEVICE MARKING 3B4 ISSUE 2 - JANUARY 2006 1 SEMICONDUCTORS PACKAGEZXMN3B14F ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 12 V GS (b) Continuous Drain Current V =4.5V T =25C I 3.5 A GS A D (b) V =4.5V T =70C 2.9 A GS A (a) V =4.5V T =25C 2.9 A GS A (c) Pulsed Drain Current I 16 A DM (b) Continuous Source Current (Body Diode) I 2.4 A S (c) Pulsed Source Current (Body Diode) I 16 A SM (a) Power Dissipation at T =25C P 1 W A D Linear Derating Factor 8 mW/C (b) Power Dissipation at T =25C P 1.5 W A D Linear Derating Factor 12 mW/C Operating and Storage Temperature Range T,T -55 to +150 C j stg THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT (a) Junction to Ambient R 125 C/W JA (b) Junction to Ambient R 83 C/W JA NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 5 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature. ISSUE 2 - JANUARY 2006 2 SEMICONDUCTORS