X-On Electronics has gained recognition as a prominent supplier of ZXMN6A07FQTA MOSFETs across the USA, India, Europe, Australia, and various other global locations. ZXMN6A07FQTA MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

ZXMN6A07FQTA Diodes Incorporated

ZXMN6A07FQTA electronic component of Diodes Incorporated
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Part No.ZXMN6A07FQTA
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET BVDSS: 41V~60V SOT23 T&R 3K
Datasheet: ZXMN6A07FQTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.616 ea
Line Total: USD 0.62 
Availability - 5304
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5304
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.616
10 : USD 0.429
100 : USD 0.2926
500 : USD 0.2299
1000 : USD 0.2057
3000 : USD 0.1815

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the ZXMN6A07FQTA from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXMN6A07FQTA and other electronic components in the MOSFETs category and beyond.

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ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Max I Low On-Resistance D V Max R T = +25C (BR)DSS DS(ON) A Fast Switching Speed (Note 7) Low Threshold 1.4A 250m V = 10V GS 60V Low Gate Charge 1.2A 350m V = 4.5V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with a fast switching speed, making it ideal for high-efficiency power management applications. Applications Mechanical Data Case: SOT23 DC-DC Converters Case Material: Molded Plastic, Green Molding Compound, Power Management Functions UL Flammability Classification Rating 94V-0 Relay And Solenoid Driving Moisture Sensitivity: Level 1 per J-STD-020 Motor Control Terminals: Matte Tin Finish Weight: 0.008 grams (Approximate) SOT23 D S D G G S Top View Top View Equivalent Circuit Pin Out Ordering Information (Notes 4 & 5) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMN6A07FTA AEC-Q101 7N6 7 8 3,000 ZXMN6A07FQTA Automotive 7N6 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXMN6A07F Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GS T = +25C (Note 7) A 1.4 Continuous Drain Current 1.1 A VGS = 10V TA = +70C (Note 7) ID 1.2 T = +25C (Note 6) A Pulsed Drain Current (Note 8) I 6.9 A DM Continuous Source Current (Body Diode) (Note 7) I 1 A S Pulsed Source Current (Body Diode) (Note 8) I 6.9 A SM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 6) 625 mW P D Linear Derating Factor 5 mW/C Power Dissipation (Note 7) 806 mW P D Linear Derating Factor 6.4 mW/C (Note 6) 200 Thermal Resistance, Junction to Ambient R JA (Note 7) 155 C/W Thermal Resistance, Junction to Ambient (Note 9) 194 R JL Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 6. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 7. For a device surface mounted on FR4 PCB measured at t 5 secs. 8. Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300s - pulse current limited by maximum junction temperate. 9. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 8 ZXMN6A07F July 2015 Diodes Incorporated www.diodes.com Document Number DS33547 Rev. 9 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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