ZXMN6A09DN8TA Diodes Incorporated

ZXMN6A09DN8 60V SO8 N-channel enhancement mode MOSFET Summary V R ( ) I (A) (BR)DSS DS(on) D 0.040 V = 10V 5.6 GS 60 0.060 V = 4.5V 4.6 GS Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D1 D2 Low on-resistance Fast switching speed G1 G2 Low threshold Low gate drive S1 S2 SOIC package Applications DC-DC converters S1 D1 Power management functions G1 D1 Disconnect switches S2 D2 Motor control G2 D2 Top view Ordering information Device Reel size Tape width Quantity (inches) (mm) per reel ZXMN6A09DN8TA 7 12 500 Device marking ZXMN 6A09D Issue 6 - January 2007 1 www.zetex.com Zetex Semiconductors plc 2007ZXMN6A09DN8 Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 V GS (b) I 5.6 A Continuous drain current V =10V T =25C D GS amb (b) 4.5 V =10V T =70C GS amb (a) 4.3 V =10V T =25C GS amb (c) I 27 A Pulsed drain current DM (b) I 3.5 A Continuous source current (body diode) S (c) I 27 A Pulsed source current (body diode) SM (a)(d) P 1.25 W Power dissipation at T = 25C D amb Linear derating factor 10 mW/C (b)(e) P 1.8 W Power dissipation at T = 25C D amb Linear derating factor 14 mW/C (b)(d) P 2.1 W Power dissipation at T = 25C D amb Linear derating factor 17 mW/C Operating and storage temperature range T , T -55 to +150 C j stg Thermal resistance Parameter Symbol Limit Unit (a)(d) R 100 C/W Junction to ambient JA (a)(e) R 70 C/W Junction to ambient JA (b)(d) R 60 C/W Junction to ambient JA NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For a device with two active die running at equal power. Issue 6 - January 2007 2 www.zetex.com Zetex Semiconductors plc 2007