Green ZXMN6A09G 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I D High Voltage V R (BR)DSS DS(ON) Low On-resistance T = +25C A Fast Switching Speed 0.04 V = 10V 7.5A GS Low Gate Drive 60V Low Threshold 6.2A 0.06 V = 4.5V GS Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation trench MOSFET features a unique structure Mechanical Data combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Case: SOT223 Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminals: Matte Tin Finish Power Management Functions Weight: 0.112 grams (Approximate) Disconnect Switches Motor Control SOT223 D D G S Top View Equivalent Circuit Pin Out - Top View Ordering Information (Note 4) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMN6A09GTA ZXMN6A09 7 12 1,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See ZXMN6A09G Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Continuous Drain Current V = 10V T = +25C (Note 6) GS A 7.5 6 A V = 10V T = +70C (Note 6) I GS A D 5.4 V = 10V T = +25C (Note 5) GS A Pulsed Drain Current (Note 7) I 33 A DM Continuous Source Current (Body Diode) (Note 6) I 3.5 A S Pulsed Source Current (Body Diode) (Note 7) I 33 A SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 2.0 W Power Dissipation at T = +25C (Note 5) A P D 16 mW/C Linear Derating Factor Power Dissipation at T = +25C (Note 6) 3.9 W A P D mW/C Linear Derating Factor 31 Thermal Resistance, Junction to Ambient (Note 5) R 62.5 C/W JA Thermal Resistance, Junction to Ambient (Note 6) R 32.2 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG 2 of 7 ZXMN6A09G March 2015 Diodes Incorporated www.diodes.com Document number: DS33553 Rev. 4 - 2