Green ZXMN6A09K 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Max I D Low On-Resistance BV Max R DSS DS(on) T = +25C A Fast Switching Speed (Note 4) Low Gate Drive 40m V = 10V 7.7A GS 60V Lead-Free Finish RoHS Compliant (Note 1) 60m V = 4.5V 6.3A GS Halogen and Antimony Free. Green Device (Note 2 & 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: TO252 (DPAK) (R ) and yet maintain superior switching performance, making it Case Material: Molded Plastic, Green Molding Compound. DS(on) ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish. Solderable per MIL-STD-202, DC-DC Converters Method 208 Power Management Functions Weight: 0.33 grams (Approximate) Disconnect Switches Motor Control D TO252 D G S Top View Pin Out -Top View Equivalent Circuit Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMN6A09KTC ZXMN6A09 13 16 2,500 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See ZXMN6A09K Maximum Ratings ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 60 V V DSS Gate-Source Voltage V V 20 GS (Note 6) 11.8 Continuous Drain Current V = 10V T = +70C (Note 6) I 9.6 A GS A D (Note 5) 7.7 Pulsed Drain Current (Note 7) 43 A I DM Continuous Source Current (Body Diode) (Note 6) 10.8 A I S Pulsed Source Current (Body Diode) (Note 7) 43 A I SM Thermal Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Unit 4.3 (Note 5) 34.4 Power Dissipation 10.1 W (Note 6) P D Linear Derating Factor 80.8 mW/C 2.15 (Note 8) 17.2 (Note 5) 29 Thermal Resistance, Junction to Ambient (Note 6) 12.3 R JA C/W (Note 8) 58.1 Thermal Resistance, Junction to Lead (Note 9) R 1.04 JL Operating and Storage Temperature Range -55 to 150 C T , T J STG Notes: 5. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions the device is measured when operating in a steady-state condition. 6. For a device surface mounted on FR4 PCB measured at t 10 sec. 7. Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D = 0.02 and pulse width 300 s. The pulse current is limited by the maximum junction temperature. 8. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 9. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 8 ZXMN6A09K November 2014 Diodes Incorporated www.diodes.com Document Number DS33554 Rev.7 - 2