ZXMN6A25DN8TA Diodes Incorporated

ZXMN6A25DN8 Dual 60V SO8 N-channel enhancement mode MOSFET Summary V R ( )I (A) (BR)DSS DS(on) D 0.050 V = 10V 5 GS 60 0.070 V = 4.5V 4.2 GS Description D1 D2 This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. G1 G2 Features S1 S2 Low on-resistance Fast switching speed Low gate drive Low profile SO8 package Applications S1 D1 DC - DC converters D1 G1 Power management functions S2 D2 Motor control G2 D2 Ordering information Pin out - top view Device Reel Tape width Quantity (inches) (mm) per reel ZXMN6A25DN8TA 7 12 500 ZXMN6A25DN8TC 13 12 2500 Device marking ZXMN 6A25D Issue 4 - November 2006 1 www.zetex.com Zetex Semiconductors plc 2006ZXMN6A25DN8 Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 V GS (b) (d) 5A Continuous drain current V =10V T =25C GS amb (b) (d) 4A I V =10V T =70C D GS amb (a) (d) 3.8 A V =10V T =25C GS amb (c) I 24 A Pulsed drain current DM (b) I 3.4 A Continuous source current (body diode) S (c) I 24 A Pulsed source current (body diode) SM (a) (d) P 1.25 W Power dissipation at T =25C D amb Linear derating factor 10 mW/C (a) (e) P 1.8 W Power dissipation at T =25C D amb Linear derating factor 14 mW/C (b) (d) P 2.1 W Power dissipation at T =25C D amb Linear derating factor 17 mW/C Operating and storage temperature range T :T -55 to +150 C j stg Thermal resistance Parameter Symbol Limit Unit (a) (d) R 100 C/W Junction to ambient JA (a) (e) R 70 C/W Junction to ambient JA (b) (d) R 60 C/W Junction to ambient JA NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width=300 s - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For a device with two active die running at equal power. Issue 4 - November 2006 2 www.zetex.com Zetex Semiconductors plc 2006