ZXMN6A25G Green 60V SOT223 N-channel enhancement mode MOSFET Product Summary Features and Benefits Low Input Capacitance I D BV R DSS DS(on) max T = +25C Low On-Resistance A Fast Switching Speed 50m V = 10V 6.7A GS 60V Lead-Free Finish RoHS Compliant (Notes 1 & 2) 70m V = 4.5V 5.7A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET is designed to minimize the on-state Mechanical Data resistance (R ) and yet maintain superior switching performance, DS(ON) Case: SOT223 making it ideal for high-efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminals: Matte Tin Finish Power Management Functions Weight: 0.112 grams (Approximate) Backlighting SOT223 Top View Pin Out - Top Equivalent Circuit View Ordering Information (Note 4) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMN6A25GTA ZXMN6A25 7 12 1,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See ZXMN6A25G Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C (Note 6) A 6.7 Steady 5.4 A Continuous Drain Current, V = 10V T = +70C (Note 6) I GS A D State 4.8 T = +25C (Note 5) A Maximum Body Diode Forward Current (Note 6) I 5.7 A S Pulsed Drain Current (Note 7) I 28.5 A DM Pulsed Source Current (Note 7) I 28.5 A SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation 2 W T = +25C (Note 5) P A D Linear Derating Factor 16 mW/C 3.9 W Total Power Dissipation T = +25C (Note 6) P A D 31 mW/C Linear Derating Factor Steady state (Note 5) 62.5 C/W Thermal Resistance, Junction to Ambient R JA Steady state (Note 6) 32 C/W Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1.0 A IDSS VDS = 60V, VGS = 0V Gate-Source Leakage nA I 100 V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage 1.0 V V V = V , I = 250A GS(th) DS GS D 50 V = 10V, I = 3.6A GS D Static Drain-Source On-Resistance (Note 8) m R DS(ON) 70 V = 4.5V, I = 3.0A GS D Diode Forward Voltage (Note 8) 0.85 0.95 V V V = 0V, I = 5.5A SD GS S Forward Transconductance (Note 8 & 10) g 10.2 S V = 15V, I = 4.5A fs DS D DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C 1,063 iss V = 30V, V = 0V DS GS Output Capacitance C 104 pF oss f = 1.0MHz Reverse Transfer Capacitance C 64 rss Total Gate Charge (V = 5.0V) Q 11 GS g Total Gate Charge (V = 10V) 20.4 GS Q g nC V = 30V, I = 1.4A, DS D Gate-Source Charge 4.1 Q gs Gate-Drain Charge 5.1 Q gd Turn-On Delay Time 3.8 t D(on) Turn-On Rise Time 4.0 t V = 10V, V = 30V, R = 6.0, r GS DD G nS Turn-Off Delay Time t 26.2 I = 1.0A D(off) D Turn-Off Fall Time t 10.6 f Body Diode Reverse Recovery Time t 22 nS rr I = 2.2A, dI/dt = 100A/s F Body Diode Reverse Recovery Charge Q 21.4 nC rr Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions 6. For a device surface mounted on FR4 PCB measured at t 10 secs. 7. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300s - pulse width limited by maximum junction temperature. 8. Measured under pulsed conditions. Width=300s. Duty cycle 2%. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 ZXMN6A25G February 2015 Diodes Incorporated www.diodes.com Document number: DS33559 Rev. 3 - 2 ADVANCE INFORMATION ADVANCED INFORMATION