X-On Electronics has gained recognition as a prominent supplier of ZXMN7A11KTC MOSFETs across the USA, India, Europe, Australia, and various other global locations. ZXMN7A11KTC MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

ZXMN7A11KTC Diodes Incorporated

ZXMN7A11KTC electronic component of Diodes Incorporated
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See Product Specifications
Part No.ZXMN7A11KTC
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: N-Channel 70 V 4.2A (Ta) 2.11W (Ta) Surface Mount TO-252-3
Datasheet: ZXMN7A11KTC Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.383 ea
Line Total: USD 957.5 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
4850
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 299
Multiples : 1
299 : USD 0.4341
500 : USD 0.3943
1000 : USD 0.3843
2500 : USD 0.3668

2470
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 234
Multiples : 1
234 : USD 0.5547
250 : USD 0.5517
500 : USD 0.5487
1000 : USD 0.5458

1149
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6186
10 : USD 0.5458
30 : USD 0.5095
100 : USD 0.4731
500 : USD 0.452
1000 : USD 0.4424

3653
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.089
10 : USD 0.7183
100 : USD 0.5313
500 : USD 0.4257
1000 : USD 0.3861

46075
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.399

2470
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 18
Multiples : 1
18 : USD 0.5547

4850
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 21
Multiples : 1
21 : USD 0.4341

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
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Cnhts
Hts Code
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Taric
Typical Turn-On Delay Time
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We are delighted to provide the ZXMN7A11KTC from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXMN7A11KTC and other electronic components in the MOSFETs category and beyond.

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ZXMN7A11K 70V N-channel enhancement mode MOSFET Summary V =70V : R =0.13 (BR)DSS DS(on) I =6.1A D Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistance Fast switching speed G Low threshold Low gate drive S DPAK package Applications DC-DC converters D Power management functions Disconnect switches Motor control Class D audio output stages D GS Ordering information Pinout - top view Device Reel size Tape width Quantity per reel (inches) (mm) ZXMN7A11KTC 13 16 2,500 Device marking ZXMN 7A11 Issue 2 - August 2006 1 www.zetex.com Zetex Semiconductors plc 2006ZXMN7A11K Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage V 70 V DSS Gate-source voltage V 20 V GS I 6.1 A Continuous drain current V =10V T =25C (b) D GS A 4.9 V =10V T =70C (b) GS A V =10V T =25C (a) 4.2 GS A Pulsed drain current (c) I 17 A DM Continuous source current (body diode) (b) I 8.7 A S Pulsed source current (body diode) (c) I 17 A SM Power dissipation at T =25C (a) P 4.06 W A D mW/C Linear derating factor 32.4 Power dissipation at T =25C (b) P 8.5 W A D mW/C Linear derating factor 68 Power dissipation at T =25C (d) P 2.11 W A D mW/C Linear derating factor 16.8 Operating and storage temperature range T , T -55 to +150 C j stg Thermal resistance Parameter Symbol Limit Unit R 30.8 C/W JA Junction to ambient R 14.7 C/W JA Junction to ambient R 59.1 C/W JA Junction to ambient NOTES: (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum junction temperature. (d)For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 2 - August 2006 2 www.zetex.com Zetex Semiconductors plc 2006

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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