X-On Electronics has gained recognition as a prominent supplier of ZXMP10A17GTA MOSFETs across the USA, India, Europe, Australia, and various other global locations. ZXMP10A17GTA MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

ZXMP10A17GTA Diodes Incorporated

Name: ZXMP10A17GTA
Brand: Diodes Incorporated
SKU: ZXMP10A17GTA_Diodes_Incorporated
Availability: InStock
Rating: 5 (11 reviews)

ZXMP10A17GTA electronic component of Diodes Incorporated

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See Product Specifications

Part No.	ZXMP10A17GTA
Manufacturer:	Diodes Incorporated
Category:	MOSFETs
Description:	MOSFET 100V P-Chnl UMOS
Datasheet:	ZXMP10A17GTA Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.2362 ea
Line Total: USD 1.24

Availability - 1260
Ship by Tue. 11 Mar to Thu. 13 Mar

MOQ: 1 Multiples: 1
Pack Size: 1

ZXMP10A17GTA More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

943

Ship by Thu. 20 Mar to Tue. 25 Mar

MOQ : 1
Multiples : 1

1 : USD 0.9881
10 : USD 0.8089
30 : USD 0.6166
100 : USD 0.4859
500 : USD 0.4447
1000 : USD 0.424

1260

Ship by Tue. 11 Mar to Thu. 13 Mar

MOQ : 1
Multiples : 1

1 : USD 1.2362
10 : USD 0.7356
100 : USD 0.4532
500 : USD 0.3707
1000 : USD 0.3377
2000 : USD 0.3003
5000 : USD 0.2882
25000 : USD 0.2816

2910

Ship by Thu. 13 Mar to Wed. 19 Mar

MOQ : 1000
Multiples : 1000

1000 : USD 0.3412

Specifications

Manufacturer

Diodes Incorporated Diodes Incorporated

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

1.6 A 1.6 A

Vds - Drain-Source Breakdown Voltage

100 V 100 V

Rds On - Drain-Source Resistance

450 mOhms 450 mOhms

Transistor Polarity

P - Channel P - Channel

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

3.9 W 3.9 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

SOT - 223 - 3 SOT - 223 - 3

Packaging

Cut Tape Cut Tape

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

20 V 20 V

Channel Mode

Enhancement Enhancement

Configuration

Single Single

Height

1.65 mm 1.65 mm

Length

6.7 mm 6.7 mm

Transistor Type

1 P - Channel 1 P - Channel

Width

3.7 mm 3.7 mm

Brand

Diodes Incorporated Diodes Incorporated

Cnhts

8541290000 8541290000

Fall Time

7.2 ns 7.2 ns

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Mosfet Mosfet

Rise Time

3.5 ns 3.5 ns

Factory Pack Quantity :

1000 1000

Subcategory

Mosfets Mosfets

Taric

8541290000 8541290000

Typical Turn-Off Delay Time

13.4 ns 13.4 ns

Typical Turn-On Delay Time

3 ns 3 ns

Category

MOSFET MOSFET

Brand Category

Diodes Incorporated Diodes Incorporated

Notes:- Show Stocked Products With Similar Attributes.

ZXMP10A17GTA Alternative Parts

We are delighted to provide the ZXMP10A17GTA from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXMP10A17GTA and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The ZXMP10A17GTA is a 100V P-Channel Ultra-FET (UMOS) Power MOSFET manufactured by Diodes Incorporated. It is comprised of the latest high-voltage MOSFET technology and uses an advanced dynamic body diode to offer fast switching and improved reliability. The device has an adjustable threshold of 0.8V to 4.5V for gate control and it is designed for use in a wide range of applications, including automotive, audio, and power management boards. It is designed to be used in 4 to 14 V logic systems and is rated for a total gate charge of 2.2nC max when operating at 12 V and 14 V, respectively. It is constructed using a dielectric passivation layer which helps to improve reliability and reduce on-resistance.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

DIO may also be referenced as

Diodes
DIODES INC
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DIODES INC.
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DiodesZetex
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PER
Pericom
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Pericom Semiconductor
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Availability	Price	Buy Price	Quantity
943 Ship by Thu. 20 Mar to Tue. 25 Mar MOQ : 1 Multiples : 1	1 : USD 0.9881 10 : USD 0.8089 30 : USD 0.6166 100 : USD 0.4859 500 : USD 0.4447 1000 : USD 0.424

1260 Ship by Tue. 11 Mar to Thu. 13 Mar MOQ : 1 Multiples : 1	1 : USD 1.2362 10 : USD 0.7356 100 : USD 0.4532 500 : USD 0.3707 1000 : USD 0.3377 2000 : USD 0.3003 5000 : USD 0.2882 25000 : USD 0.2816

2910 Ship by Thu. 13 Mar to Wed. 19 Mar MOQ : 1000 Multiples : 1000	1000 : USD 0.3412

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