A Product Line of Diodes Incorporated Green ZXMP3A16G 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max Fast Switching Speed V R max (BR)DSS DS(on) T = +25C A Low Threshold (Note 6) Low Gate Drive 45m V = -10V -7.5A GS Lead Free Finish RoHS Compliant (Notes 1 & 2) -30V Halogen and Antimony Free. Green Device (Note 3) -5.9A 70m VGS = -4.5V Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance and yet Case: SOT223 maintain superior switching performance, making it ideal for high- Case Material: Molded Plastic, UL Flammability Classification efficiency power management applications. Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Motor Control Terminals: Finish - Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.112 grams (Approximate) Relay and Solenoid Driving SOT223 D G S Equivalent Circuit Pin Out - Top View Top View Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMP3A16GTA ZXMP3A16 7 12 1,000 ZXMP3A16GTC ZXMP3A16 13 12 4,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See A Product Line of Diodes Incorporated ZXMP3A16G Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GS (Note 6) -7.5 Continuous Drain Current V = 10V T = +70C (Note 6) I -6.0 A GS A D (Note 5) -5.4 Pulsed Drain Current V = 10V (Note 7) I -24.9 A GS DM Continuous Source Current (Body diode) (Note 6) -3.2 A I S Pulsed Source Current (Body diode) (Note 7) -24.9 A I SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 2.0 (Note 5) Power Dissipation 16 W P D Linear Derating Factor 3.9 mW/C (Note 6) 31 (Note 5) 62.5 Thermal Resistance, Junction to Ambient R JA (Note 6) 32.2 C/W Thermal Resistance, Junction to Lead (Note 8) 8.51 R JL Operating and Storage Temperature Range -55 to 150 C TJ, TSTG Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 6. Same as Note (5), except the device is measured at t 10 sec. 7. Same as Note (5), except the device is pulsed with D= 0.02 and pulse width 300 s. The pulse current is limited by the maximum junction temperature. 8. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 8 March 2015 ZXMP3A16G Diodes Incorporated www.diodes.com Document Number DS33575 Rev. 6 - 2 ADVANCE INFORMATION