X-On Electronics has gained recognition as a prominent supplier of ZXMP3F30FHTA MOSFETs across the USA, India, Europe, Australia, and various other global locations. ZXMP3F30FHTA MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

ZXMP3F30FHTA Diodes Incorporated

ZXMP3F30FHTA electronic component of Diodes Incorporated
ZXMP3F30FHTA Diodes Incorporated
ZXMP3F30FHTA MOSFETs
ZXMP3F30FHTA  Semiconductors

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See Product Specifications
Part No. ZXMP3F30FHTA
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET 30V P-Channel MOSFET 20V VGS -15.3A IDM
Datasheet: ZXMP3F30FHTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6975 ea
Line Total: USD 0.7 
Availability - 3258
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3258
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.6975
10 : USD 0.4425
100 : USD 0.2691
500 : USD 0.2046
1000 : USD 0.1859
3000 : USD 0.1518
9000 : USD 0.1507

   
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RoHS - XON
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We are delighted to provide the ZXMP3F30FHTA from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXMP3F30FHTA and other electronic components in the MOSFETs category and beyond.

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ZXMP3F30FH P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D V R (BR)DSS DS(on) max T = +25C Fast Switching Speed A 4.5V Gate Drive Capability 80m V = -10V -4.0A GS -30V Thermally Enhanced SOT23 package 140m V =-4.5V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This new generation Trench MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching DS(ON) Mechanical Data performance. Case: SOT23 Case Material: Molded Plastic, Green Molding Compound Applications UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Power management functions Terminals: Finish Matte Tin annealed over Copper leadframe Portable Equipment Solderable per MIL-STD-202, Method 208 e3 Battery Charging Terminal Connections: See Diagram Weight: 0.008 grams (approximate) SOT23 D D G G S S Equivalent Circuit Top View Pin Configuration Ordering Information (Note 4) Part Number Compliance Case Packaging ZXMP3F30FHTA Standard SOT23 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXMP3F30FH Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS T = +25C (Note 6) -3.4 A T = +70C (Note 6) -2.7 A A Drain Current, V = -10V I GS D T = +25C (Note 5) -2.8 A T = +25C (Note 8) -4.0 L Pulsed Drain Current (Note 7) -15.3 A I DM Continuous Source Current (Body Diode) (Note 6) -2 A I S Pulsed Source Current (Body Diode) (Note 7) -15.3 A I SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units 0.95 W T = +25C (Note 5) A 7.6 mW/C 1.4 W Total Power Dissipation (Note 5) T = +25C (Note 6) P A D Linear Derating Factor 11.2 mW/C 1.96 W T = +25C (Note 8) L 15.7 mW/C (Note 5) 131 Thermal Resistance, Junction to Ambient C/W R JA (Note 6) 89 Operating and Storage Temperature Range -55 to +150 C T T J, STG 2 of 7 February 2014 ZXMP3F30FH Diodes Incorporated www.diodes.com Document number: DS33579 Rev. 2 - 2 NEW PRODUCT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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