ZXMP4A16G Green 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance I D BV R DSS DS(on) max T = +25C Low On-Resistance A Fast Switching Speed 60m V = -10V -6.4A GS -40V Lead-Free Finish RoHS Compliant (Notes 1 & 2) 100m V = -4.5V -5.0A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET is designed to minimize the on-state Mechanical Data resistance (R ) and yet maintain superior switching performance, DS(ON) Case: SOT223 making it ideal for high-efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminals: Matte Tin Finish Power Management Functions Weight: 0.112 grams (Approximate) Backlighting D SOT223 G S Top View Pin Out - Top Equivalent Circuit View Ordering Information (Note 4) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMP4A16GTA ZXMP4A16 7 12 1,000 ZXMP4A16GTC ZXMP4A16 13 12 4,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See ZXMP4A16G Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -40 V DSS Gate-Source Voltage V 20 V GSS T = +25C (Note 6) A -6.4 Steady -5.1 A Continuous Drain Current, V = -10V T = +70C (Note 6) I GS A D State -4.6 T = +25C (Note 5) A Maximum Body Diode Forward Current (Note 6) I -5.2 A S Pulsed Drain Current (Note 7) I -21 A DM Pulsed Source Current (Note 7) I -21 A SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation 2.0 W T = +25C (Note 5) P A D Linear Derating Factor 16 mW/C 3.9 W Total Power Dissipation T = +25C (Note 6) P A D 31 mW/C Linear Derating Factor Steady state (Note 5) 62.5 C/W Thermal Resistance, Junction to Ambient R JA Steady state (Note 6) 32 C/W Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV -40 V V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -1.0 A IDSS VDS = -40V, VGS = 0V Gate-Source Leakage nA I 100 V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage -1.0 V V V = V , I = -250A GS(th) DS GS D 60 V = -10V, I = -3.8A GS D Static Drain-Source On-Resistance (Note 8) m R DS(ON) 100 V = -4.5V, I = -2.9A GS D Diode Forward Voltage (Note 8) -0.85 -1.2 V V V = 0V, I = -3.4A SD GS S Forward Transconductance (Notes 8 & 10) g 8.85 S V = -15V, I = -3.8A fs DS D DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C 1,007 iss V = -20V, V = 0V DS GS Output Capacitance C 130 pF oss f = 1.0MHz Reverse Transfer Capacitance C 85 rss Total Gate Charge (V = -5.0V) Q 13.6 GS g Total Gate Charge (V = -10V) 26.1 GS Q g nC V = -20V, I = -3.8A, DS D Gate-Source Charge 2.8 Q gs Gate-Drain Charge 4.8 Q gd Turn-On Delay Time 2.33 t D(on) Turn-On Rise Time 8.84 t V = -10V, V = -20V, R = 6.0, r GS DD G nS Turn-Off Delay Time t 29.18 I = -1.0A D(off) D Turn-Off Fall Time t 12.54 f Body Diode Reverse Recovery Time t 27.2 nS rr I = -3A, dI/dt = 100A/s F Body Diode Reverse Recovery Charge Q 25.4 nC rr Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device surface mounted on FR4 PCB measured at t 10 secs. 7. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width limited by maximum junction temperature. 8. Measured under pulsed conditions. Width300s. Duty cycle 2%. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 ZXMP4A16G February 2015 Diodes Incorporated www.diodes.com Document number: DS33584 Rev.5 - 2 ADVANCE INFORMATION ADVANCED INFORMATION