X-On Electronics has gained recognition as a prominent supplier of ZXMP4A16KTC MOSFET across the USA, India, Europe, Australia, and various other global locations. ZXMP4A16KTC MOSFET are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

ZXMP4A16KTC Diodes Incorporated

Hot ZXMP4A16KTC electronic component of Diodes Incorporated
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See Product Specifications
Part No.ZXMP4A16KTC
Manufacturer: Diodes Incorporated
Category: MOSFET
Description: Diodes Incorporated MOSFET 40V 9.9A P-CHANNEL
Datasheet: ZXMP4A16KTC Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9379 ea
Line Total: USD 0.94

Availability - 2425
Ship by Wed. 31 Jul to Mon. 05 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
114
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 118
Multiples : 1
118 : USD 0.6191

2425
Ship by Wed. 31 Jul to Mon. 05 Aug
MOQ : 1
Multiples : 1
1 : USD 0.9379
10 : USD 0.7752
30 : USD 0.6939
100 : USD 0.633
500 : USD 0.5843
1000 : USD 0.5598

3695
Ship by Tue. 30 Jul to Thu. 01 Aug
MOQ : 1
Multiples : 1
1 : USD 1.0235
10 : USD 0.8338
100 : USD 0.6486
500 : USD 0.621

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Ciss - Input Capacitance
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the ZXMP4A16KTC from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXMP4A16KTC and other electronic components in the MOSFET category and beyond.

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ZXMP4A16K 40V P-channel enhancement mode MOSFET Summary V = -40V R = 0.060 I = -9.9A (BR)DSS DS(ON) D Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. Features D Low on-resistance Fast switching speed G Low threshold Low gate drive S DPAK package Applications DC - DC converters Audio output stages Relay and solenoid driving Motor control Ordering information Device Reel size Tape width Quantity per reel (inches) ZXMP4A16KTC 13 16mm 2500 units Device marking Pinout - Top view ZXMP 4A16 Issue 1 - March 2006 1 www.zetex.com Zetex Semiconductors plc 2006ZXMP4A16K Absolute maximum rating Parameter Symbol Limit Unit Drain-source voltage V -40 V DSS Gate-source voltage V 20 V GS Continuous drain current (b) -9.9 A V = -10V T =25C GS A I D (b) -8.0 A V = -10V T =70C GS A (a) -6.6 A V = -10V T =25C GS A (c) I -35 A Pulsed drain current DM (b) I -10.1 A Continuous source current (body diode) S (c) I -35 A Pulsed source current (body diode) SM (a) P 4.2 W Power dissipation at T =25C D A Linear derating factor 33.6 mW/C (b) P 9.5 W Power dissipation at T =25C D A Linear derating factor 76 mW/C (d) P 2.15 W Power dissipation at T =25C D A 17.2 mW/C Linear derating factor Operating and storage temperature range T :T -55 to +150 C j stg Thermal resistance Symbol Parameter Value Unit R 30 C/W (a) JA Junction to ambient R 13.2 C/W (b) JA Junction to ambient R 58 C/W (d) JA Junction to ambient NOTES: (a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 s - pulse width limited by maximum junction temperature. (d)For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 1 - March 2006 2 www.zetex.com Zetex Semiconductors plc 2006

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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