Green
ZXMP6A16DN8
DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET
Product Summary Features
I
D Low On-Resistance
BV R Max Package
DSS DS(ON) T = +25C
A
Fast Switching Speed
(Notes 4 & 6)
Low Threshold
-3.9A
85m @ V = -10V
GS Low Gate Drive
-60V SO-8
Low Profile SOIC Package
125m @ V = -4.5V -3.2A
GS
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
An Automotive-Compliant Part is Available Under Separate
This MOSFET has been designed to minimize the on-state resistance
Datasheet (ZXMP6A16DN8Q)
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Applications Mechanical Data
DC-DC Converters Case: SO-8
Power Management Functions Case Material: Molded Plastic, Green Molding Compound.
Disconnect Switches UL Flammability Classification Rating 94V-0
Motor Control Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
SO-8
D1 D2
S1 D1
G1 D1
S2 D2
G1 G2
G2 D2
S1 S2
Top View Top View Equivalent Circuit
Ordering Information (Note 4)
Part Number Case Packaging
ZXMP6A16DN8TA SO-8 500/Tape & Reel
ZXMP6A16DN8TC SO-8 2,500/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
ZXMP6A16DN8
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage -60 V
V
DSS
Gate-Source Voltage (Note 5) V
V 20
GS
(Notes 7 & 9) -3.9
T = +70C
A
Continuous Drain Current -3.1 A
V = 10V I
GS D
(Notes 7 & 9)
(Notes 6 & 9) -2.9
Pulsed Drain Current (Notes 8 & 9) -18.3 A
I
DM
Continuous Source Current (Body Diode) (Notes 7 & 9) -3.2 A
I
S
Pulsed Source Current (Body Diode) (Notes 8 & 9) -18.3 A
I
SM
Thermal Characteristics
Characteristic Symbol Value Unit
1.25
(Notes 6 & 9)
10.0
Power Dissipation 1.81 W
(Notes 6 & 10)
P
D
Linear Derating Factor 14.5 mW/C
2.15
(Notes 7 & 9)
17
(Notes 6 & 9) 100
Thermal Resistance, Junction to Ambient (Notes 6 & 10) R 70
JA
C/W
(Notes 7 & 9) 60
Thermal Resistance, Junction to Lead (Notes 9 & 11) 48.85
R
JL
Operating and Storage Temperature Range -55 to +150 C
T , T
J STG
Notes: 5. AEC-Q101 V maximum is 16V.
GS
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as Note (5), except the device is measured at t 10 sec.
8. Same as Note (5), except the device is pulsed with D = 0.02 and pulse width 300s.
9. For a dual device with one active die.
10. For a device with two active die running at equal power.
11. Thermal resistance from junction to solder-point.
2 of 8
ZXMP6A16DN8 June 2016
Diodes Incorporated
www.diodes.com
Document number: DS33586 Rev. 5 - 2