ZXMP6A17G Green 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Fast Switching Speed D BV R DSS DS(on) T = +25C Low Gate Drive A Low Input Capacitance 125m V = -10V -4.3A GS -60V Lead-Free Finish RoHS Compliant (Notes 1 & 2) 190m V = -4.5V -3.5A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This MOSFET is designed to minimize the on-state resistance and yet Mechanical Data maintain superior switching performance, making it ideal for high Case: SOT223 efficiency power management applications. Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Motor Control Terminals: Finish - Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 e3 Power Management Functions Weight: 0.112 grams (Approximate) Uninterrupted Power Supply SOT223 D G S Top View Pin Out - Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging ZXMP6A17GTA SOT223 1,000/Tape & Reel ZXMP6A17GTC SOT223 4,000/ Tape & Reel Note: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See ZXMP6A17G Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -60 V DSS Gate-Source Voltage V 20 V GSS (Note 6) -4.3 Continuous Drain Current V = 10V T = +70C (Note 6) I -3.5 A GS A D (Note 5) -3.0 Pulsed Drain Current V = 10V (Note 7) I -13.7 A GS DM Continuous Source Current (Body Diode) (Note 6) -4.8 A IS Pulsed Source Current (Body Diode) (Note 7) -13.7 A I SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 2.0 (Note 5) 16 Power Dissipation W P D Linear Derating Factor mW/C 3.9 (Note 6) 31 (Note 5) 62.5 Thermal Resistance, Junction to Ambient R JA (Note 6) 32.0 C/W Thermal Resistance, Junction to Lead (Note 8) R 9.8 JL Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 6. Same as Note 5, except the device is measured at t 10sec. 7. Same as Note 5, except the device is pulsed with D = 0.02 and pulse width 300s. The pulse current is limited by the maximum junction temperature. 8. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 8 ZXMP6A17G February 2015 Diodes Incorporated www.diodes.com Document Number DS33375 Rev. 7 - 2 ADVANCE INFORMATION